High density redistribution layer (RDL) interconnect bridge using a reconstituted wafer
An integrated circuit (IC) package is disclosed that contains high density interconnects to connect multiple dies. The IC package includes an encapsulated layer, a first dielectric layer, and a second dielectric layer. The encapsulated layer forms the base of the IC package and includes the multiple dies. The first dielectric layer positioned between the encapsulated layer and the second layer. The first dielectric layer includes vias to connect to the input/output pads of active surfaces of the multiple dies. The second dielectric layer includes interconnect layers where at least one of the interconnect layers forms an electrical path to connect at least two of the multiple dies together. According to embodiments of the present disclosure, the IC package enables a high manufacturing yield due to large tolerances allowed for selection of dies. Embodiments of the present disclosure also increase an amount of input/output interconnection between multiple dies in the IC package. Embodiments of the present disclosure further enable lower manufacturing costs because of the use of mature reconstituted dies and redistribution layer technologies and the lack of a need for an interposer to connect multiple dies.
1. An integrated circuit (IC) package, comprising:
an encapsulated layer, including:
an encapsulating material that forms opposing first and second surfaces of the encapsulated layer;
first and second IC dies, each having input/output (I/O) pads encapsulated by the encapsulating material; and
die connections positioned within the encapsulating material, wherein each die connection is connected to a corresponding I/O pad of the I/O pads of the first and second IC dies;
a first dielectric layer, including:
a first dielectric material that forms, opposing first and second surfaces of the first dielectric layer, the first surface of the first dielectric layer disposed on the second surface of the encapsulated layer; and
a first plurality of vertical vias positioned within the first dielectric material and configured to provide an electrical path for the I/O pads of the first and second IC dies, wherein each of the first plurality of vertical vias is positioned above and directly in contact with a corresponding die connection of the die connections;
a second dielectric layer, including:
a second dielectric material that forms opposing first and second surfaces of the second dielectric layer, the first surface of the second dielectric layer disposed on the second surface of the first dielectric layer;
a first bridge interconnect layer positioned within the second dielectric material and in contact with at least a first vertical via and a second vertical via of the first plurality of vertical vias to provide an electrical path between respective I/O pads of the first and second IC dies;
a first redistribution layer positioned within the second dielectric material and in contact with a third vertical via of the first plurality of vertical vias; and
a second plurality of vertical vias positioned within the second dielectric material, a first vertical via of the second plurality of vertical vias in contact with the first bridge interconnect layer and a second vertical via of the second plurality of vertical vias in contact with the first redistribution layer; and
a third dielectric layer, including:
a third dielectric material that forms opposing first and second surfaces of the third dielectric layer, the first surface of the third dielectric layer disposed on the second surface of the second dielectric layer; and
a second bridge interconnect layer positioned within the third dielectric material and in contact with the first and second vertical vias of the second plurality of vertical vias to provide an electrical path between the first bridge interconnect layer and the first redistribution layer of the second dielectric layer IC dies.
2. The IC package of claim 1 , wherein the first vertical vias and the first bridge interconnect layer are formed of a same conductive material.
3. The IC package of claim 1 , wherein the die connections are formed of a same conductive material as the first plurality of vertical vias and the first bridge interconnect layer.
4. The IC package of claim 1 , wherein the third dielectric layer further includes an under bump metallization (UBM) layer in contact with the second bridge interconnect layer.
5. The IC package of claim 4 , wherein the UBM layer is formed of a same conductive material as the second plurality of vertical vias and the second bridge interconnect layer.
6. The IC package of claim 4 , further comprising conductive pillars configured to contact the UBM layer.
7. The IC package of claim 6 , wherein the conductive pillars are formed of a same conductive material as the second plurality of vertical vias, the second bridge interconnect layer, and the UBM layer.
8. The IC package of claim 7 , wherein the second dielectric layer further includes a second redistribution layer positioned within the second dielectric layer and in contact with a fourth vertical via of the first plurality of vertical vias.
9. The IC package of claim 1 , wherein a non-active surface of each of the first and second IC dies are positioned on a same plane.
10. The IC package of claim 1 , wherein the first dielectric material is a different material than the second dielectric material.
11. The IC package of claim 1 , further comprising a heat spreader disposed in contact with a non-active surface of each of the first and second IC dies.
12. The IC package of claim 1 , wherein the first and second IC dies have non-active surfaces encapsulated by the encapsulated material.
13. An integrated circuit (IC) package, comprising:
an encapsulated layer, including:
an encapsulating material that forms opposing first and second surfaces of the encapsulated layer;
first and second IC dies, each having input/output (I/O) pads encapsulated by the encapsulating material; and
die connections positioned within the encapsulating material, wherein each die connection is connected to a corresponding I/O pad of the I/O pads of the first and second IC dies;
a first dielectric layer, including:
a first dielectric material that forms opposing first and second surfaces of the first dielectric layer, the first surface of the first dielectric layer disposed on the second surface of the encapsulated layer; and
a first plurality of vertical vias positioned within the first dielectric material and configured to provide an electrical path for the I/O pads of the first and second IC dies, wherein each of the first plurality of vertical vias is positioned above and directly in contact with a corresponding die connection of the die connections;
a second dielectric layer, including:
a second dielectric material that forms opposing first and second surfaces of the second dielectric layer, the first surface of the second dielectric layer disposed on the second surface of the first dielectric layer;
a first bridge interconnect layer positioned within the second dielectric material and in contact with at least a first vertical via and a second vertical via of the first plurality of vertical vias to provide an electrical path between respective I/O pads of the first and second IC dies;
a first redistribution layer positioned within the second dielectric material and in contact with a third vertical via of the first plurality of vertical vias; and
a second plurality of vertical vias positioned within the second dielectric material, a first vertical via of the second plurality of vertical vias in contact with the first bridge interconnect layer and a second vertical via of the second plurality of vertical vias in contact with the first redistribution layer; and
a third dielectric layer, including:
a third dielectric material that forms opposing first and second surfaces of the third dielectric layer, the first surface of the third dielectric layer disposed on the second surface of the second dielectric layer; and
a second redistribution layer positioned within the third dielectric material and in contact with the second vertical via of the second plurality of vertical vias.
14. The IC package of claim 13 , wherein the first vertical vias and the first bridge interconnect layer are formed of a same conductive material.
15. The IC package of claim 13 , wherein the die connections are formed of a same conductive material as the first plurality of vertical vias and the first bridge interconnect layer.
16. The IC package of claim 13 , wherein the third dielectric layer further includes an under bump metallization (UBM) layer in contact with the second redistribution layer.
17. The IC package of claim 16 , further comprising conductive pillars configured to contact the UBM layer.
18. The IC package of claim 17 , wherein the conductive pillars are fainted of a same conductive material as the second plurality of vertical vias, the second redistribution layer, and the UBM layer.
19. The IC package of claim 11 , wherein the first dielectric material is silicon oxide and the second dielectric material is a polyimide.
20. The IC package of claim 13 , wherein the first dielectric material is silicon oxide and the second dielectric material is an epoxy.