Light-emitting element and light-emitting device containing the same
View Patent ↗A light-emitting element is provided, including: a light-emitting unit sequentially comprising a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer, wherein the light-emitting unit has an opening through the second-type semiconductor layer and the light-emitting layer to expose a portion of the first-type semiconductor layer; a current-conduction layer disposed on the second-type semiconductor layer; a first electrode disposed on the current-conduction layer and exposing a portion thereof; a distributed Bragg reflector disposed on the first electrode and covering the exposed portion of the current-conduction layer; and a second electrode disposed on the distributed Bragg reflector and filling the opening to electrically connect to the first-type semiconductor layer.
1. A light-emitting element, comprising:
a light-emitting unit sequentially comprising a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer, wherein the light-emitting unit has an opening through the second-type semiconductor layer and the light-emitting layer to expose a portion of the first-type semiconductor layer;
a current-conduction layer disposed on the second-type semiconductor layer;
a first electrode disposed on the current-conduction layer and exposing a portion thereof;
a distributed Bragg reflector disposed on the first electrode and covering the exposed portion of the current-conduction layer;
a second electrode disposed on the distributed Bragg reflector and filling the opening to electrically connect to the first-type semiconductor layer; and
a barrier layer disposed on the distributed Bragg reflector and through the distributed Bragg reflector to connect to the first electrode.
2. The light-emitting element as claimed in claim 1 , wherein the first electrode surrounds the opening.
3. The light-emitting element as claimed in claim 2 , wherein the first electrode has a circular enclosed structure.
4. The light-emitting element as claimed in claim 2 , wherein the first electrode has a grid structure.
5. The light-emitting element as claimed in claim 1 , wherein a distance between the first electrode and the opening is about 50-250 μm.
6. The light-emitting element as claimed in claim 1 , wherein the distributed Bragg reflector is disposed on a sidewall of the opening.
7. The light-emitting element as claimed in claim 1 , further comprising:
an insulating layer disposed between the barrier layer and the second electrode, and between the distributed Bragg reflector and the second electrode.
8. The light-emitting element as claimed in claim 1 , wherein the material of the distributed Bragg reflector is an insulator.
9. The light-emitting element as claimed in claim 1 , wherein the material of the current-conduction layer is indium tin oxide.
10. A light-emitting device, comprising:
a plurality of light-emitting elements, wherein the plurality of light-emitting elements are electrically connected to each other, and one of the plurality of light-emitting elements comprises:
a light-emitting unit sequentially comprising a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer, wherein the light-emitting unit has an opening through the second-type semiconductor layer and the light-emitting layer to expose a portion of the first-type semiconductor layer;
a current-conduction layer disposed on the second-type semiconductor layer;
a first electrode disposed on the current-conduction layer and exposing a portion thereof;
a distributed Bragg reflector disposed on the first electrode and covering the exposed portion of the current-conduction layer;
a second electrode disposed on the distributed Bragg reflector and filling the opening to electrically connect to the first-type semiconductor layer; and
a barrier layer disposed on the distributed Bragg reflector and through the distributed Bragg reflector to connect to the first electrode.
11. The light-emitting device as claimed in claim 10 , wherein the first electrode surrounds the opening.
12. The light-emitting device as claimed in claim 11 , wherein the first electrode has a circular enclosed structure.
13. The light-emitting device as claimed in claim 11 , wherein the first electrode has a grid structure.
14. The light-emitting device as claimed in claim 10 , wherein a distance between the first electrode and the opening is about 50-250 μm.
15. The light-emitting device as claimed in claim 10 , wherein the distributed Bragg reflector is disposed on a sidewall of the opening.
16. The light-emitting device as claimed in claim 10 , further comprising:
an insulating layer disposed between the barrier layer and the second electrode, and between the distributed Bragg reflector and the second electrode.
17. The light-emitting device as claimed in claim 10 , wherein the material of the distributed Bragg reflector is an insulator.
18. The light-emitting device as claimed in claim 10 , wherein the material of the current-conduction layer is indium tin oxide.