ULTRAVIOLET EMITTING DEVICE
Embodiments of the invention include a light emitting diode (UVLED), the UVLED including a semiconductor structure with an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The UVLED is disposed on a mount. A reflective layer is disposed on a surface of the mount surrounding the UVLED.
1 . A device comprising:
a light emitting diode (UVLED) comprising a semiconductor structure comprising an active layer disposed between an n-type region and a p-type region, wherein the active layer emits UV radiation;
a mount comprising electrical connection pads formed on a top surface of the mount, wherein the UVLED is disposed on the mount and attached to the electrical connection pads; and
a reflective layer disposed over portions of the electrical connection pads in direct contact with the electrical connection pads, surrounding the UVLED, wherein a first portion of the reflective layer is disposed over the electrical connection pads in direct contact with the electrical connection pads, and a second portion of the reflective layer is in direct contact with a top surface of the mount.
2 . The device of claim 1 further comprising a lens disposed over the UVLED.
3 . (canceled)
4 . The device of claim 1 wherein the reflective layer comprises aluminum and the electrical connection pads comprise gold.
5 . The device of claim 1 wherein the reflective layer comprises particles disposed in a transparent material and the electrical connection pads comprise gold.
6 . The device of claim 5 wherein the particles are one of polytetrafluoroethylene (PTFE) and Al 2 O 3 .
7 . A method comprising:
disposing first and second electrical pads on a mount;
disposing a reflective layer overlying and in direct contact with first portions of the first and second electrical pads;
patterning the reflective layer to form an opening that exposes second portions of the first and second electrical pads; and
electrically and physically connecting to the first and second electrical pads a light emitting diode (UVLED) comprising a semiconductor structure comprising an active layer disposed between an n-type region and a p-type region, wherein the active layer emits UV radiation.
8 . The method of claim 7 wherein disposing a reflective layer overlying first portions of the first and second electrical pads comprises electron-beam deposition of aluminum.
9 . The method of claim 7 wherein disposing a reflective layer overlying first portions of the first and second electrical pads comprises one of screen printing, stencil printing, dispensing, and molding a mixture of particles and a transparent material.
10 . The method of claim 7 further comprising molding a lens over the UVLED such that the lens is disposed over the reflective layer.
11 . The device of claim 2 wherein the reflective layer is disposed beneath the lens.
12 . The device of claim 2 wherein the lens is disposed along the sidewall of the UVLED.
13 . The device of claim 1 wherein a first portion of the reflective layer is disposed over the electrical connection pads in direct contact with the electrical connection pads, and a second portion of the reflective layer is in direct contact with a top surface of the mount.
14 . The device of claim 1 wherein a length of a side of the UVLED is no more than 500 μm.
15 . A device comprising:
a light emitting diode (UVLED) comprising a semiconductor structure comprising an active layer disposed between an n-type region and a p-type region, wherein the active layer emits UV radiation;
a mount comprising electrical connection pads formed on a top surface of the mount, wherein the UVLED is disposed on the mount and attached to the electrical connection pads; and
a reflective layer disposed over portions of the electrical connection pads in direct contact with the electrical connection pads, surrounding the UVLED, wherein the reflective layer comprises a Ti layer in direct contact with the electrical connection pad and an Al layer disposed on the Ti layer.
16 . The device of claim 1 wherein the reflective layer is electrically conductive.
17 - 20 . (canceled)
21 . The device of claim 15 further comprising a lens disposed over the UVLED.
22 . The device of claim 21 wherein the reflective layer is disposed beneath the lens.
23 . The device of claim 15 wherein the electrical connection pads comprise gold.
24 . The device of claim 15 wherein a first portion of the reflective layer is disposed over the electrical connection pads in direct contact with the electrical connection pads, and a second portion of the reflective layer is in direct contact with a top surface of the mount.