Nitride semiconductor substrate having recesses at interface between base substrate and initial nitride
View Patent ↗The present invention provides a nitride semiconductor substrate having an initial nitride and a nitride semiconductor sequentially stacked on one principal plane of a base substrate, wherein the nitride semiconductor substrate comprises recesses depressed from an interface between the base substrate and the initial nitride toward the base substrate along one arbitrary cross section; the recesses each have a diameter of 6 nm or more and 60 nm or less and are formed at a density of 3×10 8 pieces/cm 2 or more and 1×10 11 pieces/cm 2 or less; and the recess preferably has a depth of 3 nm or more and 45 nm or less from the interface between the base substrate and the initial nitride toward the base substrate.
1. A nitride semiconductor substrate having an initial nitride and a nitride semiconductor sequentially stacked on one principal plane of a base substrate, wherein
the nitride semiconductor substrate comprises recesses depressed from an interface between the base substrate and the initial nitride toward the base substrate along one arbitrary cross section, and the recesses each have a diameter of 6 nm or more and 60 nm or less and are formed at a density of 3×10 8 pieces/cm 2 or more and 1×10 11 pieces/cm 2 or less,
the recess is different from the base substrate in at least one of composition, crystal structure, crystal orientation, and crystal phase, and
the recess is at least one of a space and a mode filled with a polycrystalline or amorphous inorganic material.
2. A nitride semiconductor substrate having an initial nitride and a nitride semiconductor sequentially stacked on one principal plane of a base substrate, wherein
the nitride semiconductor substrate comprises recesses depressed from an interface between the base substrate and the initial nitride toward the base substrate along one arbitrary cross section, and the recesses each have a diameter of 6 nm or more and 60 nm or less and are formed at a density of 3×10 8 pieces/cm 2 or more and 1×10 11 pieces/cm 2 or less,
the recess has a depth of 3 nm or more and 45 nm or less from the interface between the base substrate and the initial nitride toward the base substrate,
the recess is different from the base substrate in at least one of composition, crystal structure, crystal orientation, and crystal phase, and
the recess is at least one of a space and a mode filled with a polycrystalline or amorphous inorganic material.