Optical semiconductor element mounting substrate and optical semiconductor device using thermosetting resin composition for light reflection
Disclosed is an optical semiconductor device having an optical semiconductor mounting element including a recess. On an inner side face of the recess is a thermosetting resin composition for light reflection, which, after curing, can realize high reflectance in a range of visible light to near ultraviolet light, has excellent heat deterioration resistance and tablet moldability, and is less likely to cause burrs during transfer molding, and a process for producing the resin composition, and an optical semiconductor element mounting substrate and an optical semiconductor device using the resin composition. The heat curable resin composition for light reflection comprises a heat curable component and a white pigment and is characterized in that the length of burrs caused upon transfer molding under conditions of molding temperature of 100° C. to 200° C., molding pressure of not more than 20 MPa, and molding time of 60 to 120 sec is not more than 5 mm and the light reflectance after heat curing at a wavelength of 350 nm to 800 nm is not less than 80%.
1. An optical semiconductor device, comprising:
an optical semiconductor element mounting substrate having a recess providing an optical semiconductor element mounting region, the recess having a bottom face and in inner peripheral side face, and wherein the inner peripheral side face of the recess comprises a thermosetting resin composition for light reflection comprising:
a thermosetting component and a white pigment (E), wherein the thermosetting resin composition for light reflection has a property that the length of burrs generated during transfer molding under conditions of a molding temperature of 100° C. to 200° C. is not greater than 5 mm;
an optical semiconductor element mounted on the bottom face of the recess in the optical semiconductor element mounting substrate; and
a phosphor-containing transparent encapsulating resin layer formed in the recess so as to cover the optical semiconductor element.
2. The optical semiconductor device according to claim 1 , wherein the thermosetting component of the thermosetting resin comprises an epoxy resin (A) having epoxy groups.
3. The optical semiconductor device according to claim 2 , wherein the thermosetting component of the thermosetting resin further comprises a curing agent (B) having active groups capable of reacting with the epoxy groups, and wherein the blending ratio of the epoxy resin (A) and the curing agent (B) is a ratio of 0.5 to 1.5 equivalents of active groups relative to 1 equivalent of epoxy groups.
4. The optical semiconductor device according to claim 3 , wherein the curing agent (B) comprises cyclohexanetricarboxylic anhydride.
5. The optical semiconductor device according to claim 1 , wherein the thermosetting resin composition for light reflection further comprises a thickener (H), the thickener (H) comprising a nanoparticle filler having a median particle size of 1 nm to 1000 nm.
6. The optical semiconductor device according to claim 1 , wherein the thermosetting resin composition for light reflection further contains an inorganic filler (D), the inorganic filler (D) comprising at least one of a porous filler and a compound having oil absorption capacity.
7. The optical semiconductor device according to claim 1 , wherein the thermosetting resin composition for light reflection further comprises an inorganic filler (D), the inorganic filler (D) comprising at least one of silica, aluminum hydroxide, magnesium hydroxide, barium sulfate, magnesium carbonate and barium carbonate.
8. The optical semiconductor device according to claim 1 , wherein the white pigment (E) comprises at least one of alumina, magnesium oxide, antimony oxide, titanium oxide, zirconium oxide and inorganic hollow particles.
9. The optical semiconductor device according to claim 1 , wherein the white pigment (E) comprises inorganic hollow particles comprising at least one of sodium silicate glass, aluminosilicate glass, sodium borosilicate soda glass and Shirasu glass.
10. The optical semiconductor device according to claim 1 , wherein the white pigment (E) comprises:
at least one of alumina, magnesium oxide, antimony oxide, titanium oxide, and zirconium oxide; and
inorganic hollow particles comprising at least one of sodium silicate glass, aluminosilicate glass, sodium borosilicate soda glass and Shirasu glass.
11. The optical semiconductor device according to claim 7 , wherein the total blending amount of the inorganic filler (D) and the white pigment (E) ranges from 10 vol % to 85 vol % relative to total volume of the thermosetting resin composition.
12. The optical semiconductor device according to claim 1 , wherein the thermosetting resin composition for light reflection comprises a kneaded product obtained by kneading the thermosetting component and the white pigment (E) at a temperature of 20 to 100° C. for a time of 10 to 30 minutes.
13. The optical semiconductor device according to claim 12 , wherein the kneaded product is aged at 0 to 30° C. for 1 to 72 hours after the kneading the thermosetting component and the white pigment (E).
14. An outdoor display, comprising the optical semiconductor device according to claim 1 .