Semiconductor component and method of manufacture
A semiconductor component includes a support having a lead integrally formed thereto. An insulated metal substrate is mounted to a surface of the support and a semiconductor chip is mounted to the insulated metal substrate. A III-N based semiconductor chip is mounted to the insulated metal substrate, where the III-N based semiconductor chip has a gate bond pad, a drain bond pad, and a source bond pad. A silicon based semiconductor chip is mounted to the III-N based semiconductor chip. In accordance with an embodiment the silicon based semiconductor chip includes a device having a gate bond pad, a drain bond pad, and a source bond pad. The drain bond pad of the III-N based semiconductor chip may be bonded to the substrate or to a lead. In accordance with another embodiment, the silicon based semiconductor chip is a diode.
1. A semiconductor component having at least a first terminal, comprising:
a leadframe having first and second opposing sides and a first lead, the first lead integrally formed with the leadframe and a portion of the first side serving as a die receiving area;
a first semiconductor chip mounted to the die receiving area, the first semiconductor chip having first and second surfaces, a first gate bond pad, a first source bond pad, and a first drain bond pad, the first semiconductor chip configured from a III-N semiconductor material, wherein the second surface of the first semiconductor chip is coupled to the die receiving area; and
a second semiconductor chip mounted to the first semiconductor chip and having first and second surfaces, a second gate bond pad, a second source bond pad, and a second drain bond pad, the second semiconductor chip configured from a silicon based material, wherein the second surface of the second semiconductor chip is bonded to the first source bond pad through a bonding agent.
2. A semiconductor component having at least a first terminal, comprising:
a leadframe having first and second opposing sides and a first lead, the first lead integrally formed with the leadframe and a portion of the first side serving as a die receiving area
a second lead and a third lead, wherein the second lead and the third lead are electrically isolated from the leadframe;
a first semiconductor chip mounted to the die receiving area, the first semiconductor chip comprising a substrate having a first surface and a second surface that serve as first and second surfaces of the first semiconductor chip, respectively, a first gate bond pad, a first source bond pad, and a first drain bond pad, the first semiconductor chip configured from a III-N semiconductor material, wherein the second surface of the first semiconductor chip is coupled to the die receiving area; and
a second semiconductor chip mounted to the first semiconductor chip and having first and second surfaces, a second gate bond pad, a second source bond pad, and a second drain bond pad, the second semiconductor chip configured from a silicon based material, wherein the second surface of the second semiconductor chip is coupled to the first source bond pad.
3. The semiconductor component of claim 2 , wherein the first drain bond pad is electrically coupled to the leadframe.
4. The semiconductor component of claim 3 , wherein the first drain bond pad is electrically coupled to the leadframe using a clip or one or more bonding wires.
5. The semiconductor component of claim 2 , wherein the second source bond pad is electrically coupled to the second lead and to the first gate bond pad.
6. The semiconductor component of claim 5 , wherein the first drain bond pad is electrically coupled to the leadframe using a clip or one or more bonding wires.
7. The semiconductor component of claim 5 , wherein the second gate bond pad is electrically coupled to the third lead.
8. The semiconductor component of claim 7 , further including an electrical interconnect that couples the substrate to the second lead.
9. The semiconductor component of claim 7 , wherein the second source bond pad is electrically coupled to the first gate bond pad.
10. The semiconductor component of claim 9 , wherein the substrate is electrically coupled to the second lead.
11. The semiconductor component of claim 7 , wherein the first semiconductor chip includes an active area and wherein the first source bond pad and the first drain bond pad are over the active area.
12. The semiconductor component of claim 2 , wherein the first drain bond pad is electrically coupled to the first lead, the second source bond pad is electrically coupled to the first gate bond pad, the first gate bond pad is electrically coupled to the second lead, and the second gate bond pad is electrically coupled to the third lead.
13. The semiconductor component of claim 12 , wherein the first drain bond pad is electrically coupled to the second lead by a first clip or a first set of bonding wires.