Single phase lead-free cubic pyrochlore bismuth zinc niobate-based dielectric materials and processes for manufacture
Both single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric materials with a chemical composition of Bi 1.5 Zn (0.5+y) Nb (1.5−x) Ta (x) O (6.5+y) , with 0≦x<0.23 and 0≦y<0.9 and films with these average compositions with Bi 2 O 3 particles in an amorphous matrix and a process of manufacture thereof. The crystalline BZNT-based dielectric material has a relative permittivity of at least 120, a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cm 3 and a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm 3 . The process is a wet chemical process that produces thin films of Bi 1.5 Zn (0.5+y) Nb (1.5−x) Ta (x) O (6.5+y) without the use of 2-methoxyethanol and pyridine.
1. A process for making a single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric material, the process comprising:
preparing separate precursors of bismuth, zinc and niobium without the use of 2-methoxyethanol and pyridine;
chelating each of the precursors of bismuth, zinc and niobium;
mixing the chelated precursors of bismuth, zinc and niobium and forming a bismuth-zinc-niobium mixture;
drying the mixture; and
pyrolyzing the dried mixture and forming a single phase dielectric material with a chemical composition of Bi 1.5 Zn (0.5+y) Nb (1.5−x) Ta (x) O (6.5+y) , with 0≦x<0.23 and 0≦y<0.9.
2. The process of claim 1 , wherein the niobium precursor contains niobium ethoxide and anhydrous ethylene glycol.
3. The process of claim 2 , wherein the zinc precursor contains zinc acetate dihydrate and ethylene glycol.
4. The process of claim 3 , wherein the bismuth precursor contains bismuth nitrate pentahydrate and ethylene glycol.
5. The process of claim 4 , wherein the precursors of bismuth, zinc and niobium are chelated with citric acid.
6. The process of claim 1 , wherein the mixture is dried at a temperature greater than 200° C.
7. The process of claim 1 , wherein the dried mixture is pyrolyzed at a temperature greater than 250° C.
8. The process of claim 1 , further including pre-pyrolyzing the dried mixture at a temperature greater than 300° C.
9. The process of claim 1 , wherein the single phase dielectric material has at least one of a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cm 3 , and a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm 3 .
10. The process of claim 1 , further comprising preparing a separate precursor of tantalum without the use of 2-methoxyethanol and pyridine, the precursor of tantalum containing tantalum ethoxide and ethylene glycol.
11. The process of claim 10 , further comprising chelating the precursor of tantalum, mixing the chelated precursors of bismuth, zinc, niobium and tantalum to form a bismuth-zinc-niobium-tantalum mixture;
drying the mixture; and
pyrolyzing the dried mixture and forming a single phase dielectric material with a chemical composition of Bi 1.5 Zn (0.5+y) Nb (1.5−x) Ta (x) O (6.5+y) , with 0.1≦x<0.2 and 0.2≦y<0.7.
12. The process of claim 11 , wherein the single phase dielectric material has at least one of a maximum applied electric field of at least 5.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 60 J/cm 3 and a maximum energy storage at 200° C. and 10 kHz of at least 30 J/cm 3 .
13. The process of claim 12 , wherein the single phase dielectric material has at least one of a maximum applied electric field of at least 4.5 MV/cm at 1 kHz, a maximum applied electric field of at least 4.7 MV/cm at 100 Hz, and a maximum applied electric field of at least 5.25 MV/cm at 10 kHz.
14. The process of claim 13 , wherein the single phase dielectric material has at least one of a maximum applied electric field of at least 5.0 MV/cm at 1 kHz, a maximum applied electric field of at least 5.2 MV/cm at 100 Hz, and a maximum applied electric field of at least 5.5 MV/cm at 10 kHz.
15. The process of claim 11 , wherein the single phase dielectric material has at least one of a maximum energy storage of at least 50 J/cm 3 at 1 kHz and 25° C., a maximum energy storage electric storage of at least 63 J/cm 3 at 10 kHz and 25° C., a maximum energy storage of at least 25 J/cm 3 at 1 kHz and 200° C., and a maximum energy storage of at least 30 J/cm 3 at 10 kHz and 200° C.
16. The process of claim 15 , wherein the single phase dielectric material has at least one of a maximum energy storage of at least 54 J/cm 3 at 1 kHz and 25° C., a maximum energy storage electric storage of at least 66 J/cm 3 at 10 kHz and 25° C., a maximum energy storage of at least 33 J/cm 3 at 1 kHz and 200° C., and a maximum energy storage of at least 37 J/cm 3 at 10 kHz and 200° C.
17. The process of claim 11 , further comprising forming nanoparticles of Bi 2 O 3 within an amorphous matrix of the single phase dielectric material.
18. The process of claim 17 , wherein the amorphous matrix of the single phase dielectric material with nanoparticles of Bi 2 O 3 is a thin film.