Semiconductor device having silicon-germanium layer on fin and method for manufacturing the same
A semiconductor device is provided, including a substrate with an isolation layer formed thereon, wherein the substrate has a fin protruding up through the isolation layer to form a top surface and a pair of lateral sidewalls of the fin above the isolation layer; a silicon-germanium (SiGe) layer epitaxially grown on the top surface and the lateral sidewalls of the fin; and a gate stack formed on the isolation layer and across the fin, wherein the fin and the gate stack respectively extend along a first direction and a second direction. The SiGe layer formed on the top surface has a first thickness, the SiGe layer formed on said lateral sidewall has a second thickness, and a ratio of the first thickness to the second thickness is in a range of 1:10 to 1:30.
1. A semiconductor device, comprising:
a substrate with an isolation layer formed thereon, wherein the substrate has a fin protruding up through the isolation layer to form a top surface and a pair of lateral sidewalls of the fin above the isolation layer;
a silicon-germanium (SiGe) layer epitaxially grown on the top surface and the pair of lateral sidewalls of the fin, wherein the SiGe layer formed on the top surface has a first thickness, the SiGe layer formed on said lateral sidewall has a second thickness, and a ratio of the first thickness to the second thickness is in a range of 1:10 to 1:30; and
a gate stack formed on the isolation layer and across the top surface and the pair of lateral sidewalls of the fin, wherein the fin extends along a first direction, and the gate stack extends along a second direction different from the first direction.
2. The semiconductor device according to claim 1 , wherein the first thickness of the SiGe layer is a maximum thickness of the SiGe layer formed on the top surface of the fin, and the second thickness of the SiGe layer is a maximum thickness of the SiGe layer formed on said lateral sidewall of the fin.
3. The semiconductor device according to claim 1 , wherein the SiGe layer contains 20% to 75% of germanium (Ge).
4. The semiconductor device according to claim 1 , wherein the second thickness of the SiGe layer formed on one of the pair of lateral sidewalls is in a range of 20 Å to 50 Å.
5. The semiconductor device according to claim 1 , further comprising:
a source region and a drain region positioned correspondingly to opposite sides of the fin, wherein the opposite sides of the fin are exposed by the gate stack;
a SiGe source formed at the source region and a SiGe drain formed at the drain region,
wherein a channel region is formed between the source region and the drain region.
6. The semiconductor device according to claim 5 , wherein the channel region comprises:
the fin beneath the gate stack and above the isolation layer; and
the SiGe layer formed on the top surface and on the pair of lateral sidewalls of the fin.
7. The semiconductor device according to claim 5 , wherein one of the SiGe source and the SiGe drain contacts and completely shields surfaces of the SiGe layer formed on the top surface and formed on the pair of lateral sidewalls of the fin exposed by the gate stack.
8. The semiconductor device according to claim 5 , wherein the source region comprises a first recessed surface below the isolation layer and the SiGe source is formed on the first recessed surface, and the drain region comprises a second recessed surface below the isolation layer and the SiGe drain is formed on the second recessed surface.
9. The semiconductor device according to claim 1 , wherein the gate stack comprises:
a gate dielectric layer, formed on the isolation layer and contacting the SiGe layer formed on the top surface and formed on the pair of lateral sidewalls of the fin; and
a gate electrode layer formed on the gate dielectric layer.