Gallium nitride semiconductor device with isolated fingers
Implementations of semiconductor devices may include: an isolated drain finger, a gate ring, and a source ring; wherein the gate ring surrounds a perimeter of the isolated drain finger; wherein the source ring surrounds an outer perimeter of the gate ring and the isolated drain finger; wherein a gate bus is coupled to the gate ring; wherein a first electrically insulative portion is located between the isolated drain finger and the gate ring; and wherein a second electrically insulative portion is located between the gate and the source ring.
1. A semiconductor device comprising:
a single isolated drain finger, a gate ring and a source ring;
wherein the gate ring completely surrounds a perimeter of the isolated drain finger, forming a closed shape around the drain finger;
wherein the source ring completely surrounds an outer perimeter of the gate ring and the isolated drain finger, forming a second closed shape around the gate ring and isolated drain finger;
wherein a gate bus is coupled to the gate ring;
wherein a first electrically insulative portion is located between the isolated drain finger and the gate ring; and
wherein a second electrically insulative portion is located between the gate ring and the source ring.
2. The semiconductor device of claim 1 , further comprising a contact in each of the isolated drain finger, the gate ring and the source ring.
3. The semiconductor device of claim 1 , wherein the device is a high electron mobility transistor (HEMT).
4. The semiconductor device of claim 1 , wherein the gate bus is coupled to the gate ring through a contact in the middle of the gate ring.
5. The semiconductor device of claim 1 , wherein the gate bus is coupled to the gate ring at an edge of the ring through a contact crossing the source ring.
6. The semiconductor device of claim 1 , wherein an active area of the device is inside the source ring.
7. The semiconductor device of claim 1 , wherein an active area of the device includes the source ring.
8. The semiconductor device of claim 1 , wherein an active area of the device ends at an edge of the isolated drain finger.
9. A semiconductor device comprising:
an isolated source finger,
a gate ring surrounding the isolated source finger,
a drain ring surrounding the gate ring,
a guard ring surrounding the drain ring;
a gate bus coupled to the gate ring;
a first electrically insulative portion between the gate ring and the source ring; and a second electrically insulative portion between the drain finger and the gate ring.
10. The semiconductor device of claim 9 , wherein the device is a high electron mobility transistor (HEMT).
11. The semiconductor device of claim 9 , further comprising a contact in each of the isolated drain finger, the gate ring and the source ring.
12. The semiconductor device of claim 9 , wherein an active area of the device is inside the drain ring.
13. The semiconductor device of claim 9 , wherein an active area of the device includes the drain ring.