Guard rings for cascode gallium nitride devices
Implementations of semiconductor devices may include: a plurality of drain fingers and a plurality of source fingers interdigitated with one another; at least one gate; and at gate bus formed to completely surround the plurality of drain fingers and the plurality of source fingers; wherein the gate bus is mechanically and electrically coupled to the at least one gate.
1. A semiconductor device consisting of:
a plurality of drain fingers in a drain region and a plurality of source fingers in a source region, wherein the drain region and the source region are fully interdigitated with one another;
at least one gate; and
a gate bus formed to completely surround the plurality of drain fingers and source fingers;
wherein a portion of the gate bus is adjacent to and electrically coupled with the at least one gate.
2. A semiconductor device comprising:
a depletion mode (D-mode) transistor comprising one or more source fingers, one or more drain fingers and one or more gates; and
a gate bus surrounding the one or more source fingers and one or more drain fingers of the D-mode transistor;
wherein a portion of the gate bus is adjacent to the one or more gates of the D-mode transistor; and
wherein the gate bus is a first guard ring of the D-mode transistor.
3. The semiconductor device of claim 2 , wherein the D-mode transistor is a gallium nitride (GaN) high electron mobility transistor.
4. The semiconductor device of claim 2 , wherein the gate bus is formed from one selected from the group of an ohmic metal, a gate metal, and a field plate.
5. The semiconductor device of claim 2 , wherein a channel under the first guard ring is depleted during one of operation and non-operation of the device.
6. The semiconductor device of claim 2 , wherein a channel under the first guard ring is active during operation of the device.
7. The semiconductor device of claim 2 , further comprising at least one additional guard ring surrounding an outer perimeter of the first guard ring.
8. The semiconductor device of claim 7 , wherein a channel between the first guard ring and the at least one additional guard ring is depleted during one of operation of the device and non-operation of the device.
9. The semiconductor device of claim 7 , wherein a second guard ring is coupled to one of a group consisting of the gate, the source and a substrate of the device.
10. The semiconductor device of claim 7 , wherein a second guard ring is floating relative to the drain and the source.