Semiconductor component and method of manufacture
In accordance with an embodiment, a semiconductor component includes a support having a first device receiving structure, a second device receiving structure, a first lead and a second lead. A first semiconductor chip is coupled to the first device receiving structure and a second semiconductor chip is coupled to the first semiconductor chip and the second device receiving structure. The first semiconductor chip is configured from a silicon semiconductor material and has a gate bond pad, a source bond pad, and a drain bond pad, and the second semiconductor chip is configured from a gallium nitride semiconductor chip and has a gate bond pad, a source bond pad, and a drain bond pad. In accordance with another embodiment, a method for manufacturing a semiconductor component includes coupling a first semiconductor chip to a support and coupling a second semiconductor chip to the support.
1. A semiconductor component, comprising:
a support having a first device receiving structure, a second device receiving structure, and a first lead;
a first semiconductor chip having a first surface and a second surface, wherein a first gate bond pad extends from a first portion of the first surface, a source bond pad extends from a second portion of the first surface, and a drain contact is at the second surface, the gate bond pad of the first semiconductor chip coupled to the first lead and the source bond pad of the first semiconductor chip coupled to the first device receiving structure, the first semiconductor chip configured from a silicon semiconductor material and coupled to the support in a flip-chip configuration; and
a second semiconductor chip having a first surface and a second surface, a gate bond pad of the second semiconductor chip extends from a first portion of the first surface of the second semiconductor chip, a source bond pad of the second semiconductor chip extends from a second portion of the first surface of the second semiconductor chip, and a drain bond pad extends from a third portion of the first surface of the second semiconductor chip, the source bond pad of the second semiconductor chip coupled to the second surface of the first semiconductor chip, the gate bond pad of the second semiconductor chip coupled to the first device receiving structure, and the drain bond pad of the second semiconductor chip coupled to the second device receiving structure, the second semiconductor chip configured from a III-nitride semiconductor material and coupled to the support in a flip-chip configuration.
2. The semiconductor component of claim 1 , further including a first electrical interconnect electrically coupling the drain contact of the first semiconductor chip and the second surface of the second semiconductor chip.
3. The semiconductor component of claim 1 , wherein the first electrical interconnect is a clip.
4. The semiconductor component of claim 1 , further including:
a second lead extending from the first device receiving structure; and
a third lead extending from the first device receiving structure.
5. The semiconductor component of claim 1 , wherein the second device receiving structure comprises a pedestal portion and the first device receiving structure comprises a mating portion, the pedestal portion thicker than the mating portion.
6. The semiconductor component of claim 1 , further including a second lead, the second lead extending from the second device receiving structure.
7. The semiconductor component of claim 6 , further including:
a second lead extending from the first device receiving structure; and
a third lead extending from the first device receiving structure.
8. A semiconductor component, comprising:
a support having a first device receiving structure, a second device receiving structure, and a first lead, the first lead extending from the second device receiving structure;
a first semiconductor chip bonded to the first device receiving structure, the first semiconductor chip having a first surface and a second surface, wherein a cathode is formed from a first portion of the first surface and an anode is formed from a first portion of the second surface, the first semiconductor chip configured from a silicon semiconductor material; and
a second semiconductor chip having a first surface and a second surface, a gate bond pad of the second semiconductor chip extends from a first portion of the first surface of the second semiconductor chip, a source bond pad of the second semiconductor chip extends from a second portion of the first surface of the second semiconductor chip, and a drain bond pad extends from a third portion of the first surface of the second semiconductor chip, the source bond pad of the second semiconductor chip coupled to the cathode of the first semiconductor chip, the gate bond pad of the second semiconductor chip coupled to the first device receiving structure, and the drain bond pad of the second semiconductor chip coupled to the second device receiving structure, the second semiconductor chip configured from a III-nitride semiconductor material and coupled to the support in a flip-chip configuration.
9. The semiconductor component of claim 8 , wherein the second device receiving structure comprises a body of electrically conductive material that is spaced apart and electrically isolated from the first device receiving structure, and wherein the first lead extends from the body of electrically conductive material.
10. The semiconductor component of claim 9 , wherein the first device receiving structure comprises a rectangularly shaped portion having a second lead extending therefrom.
11. The semiconductor component of claim 10 , wherein a sum of a thickness of the second lead and the first semiconductor chip substantially equals a thickness of the body of electrically conductive material.
12. The semiconductor component of claim 11 , further including a first bonding agent between the anode and the first device receiving structure, a second bonding agent between the cathode and the source bond pad, and a third bonding agent between the drain bond pad and the body of electrically conductive material.
13. The semiconductor component of claim 12 , wherein the first bonding agent, the second bonding agent, and the third bonding agent are the same material.
14. A semiconductor component, comprising:
a support having an interconnect area, a device receiving area, and an electrically conductive substrate;
an insulating material formed on the device receiving area;
a first electrically conductive layer formed on a first portion of the insulating material;
a second electrically conductive layer formed on a second portion of the insulating material;
a first lead adjacent to and electrically isolated from the first electrically conductive layer;
a second lead adjacent to and electrically isolated from the second electrically conductive layer;
a third lead extending from the electrically conductive substrate;
a first semiconductor chip having a first surface and a second surface, wherein a first gate bond pad extends from a first portion of the first surface, a source bond pad extends from a second portion of the first surface, and a drain contact is at the second surface, the gate bond pad of the first semiconductor chip coupled to the first electrically conductive layer and the source bond pad of the first semiconductor chip coupled to the second electrically conductive layer, the first semiconductor chip configured from a silicon semiconductor material and coupled to the support in a flip-chip configuration; and
a second semiconductor chip having a first surface and a second surface, a gate bond pad of the second semiconductor chip extends from a first portion of the first surface of the second semiconductor chip, a source bond pad of the second semiconductor chip extends from a second portion of the first surface of the second semiconductor chip, and a drain bond pad extends from a third portion of the first surface of the second semiconductor chip, the source bond pad of the second semiconductor chip coupled to the drain contact of the first semiconductor chip, the gate bond pad of the second semiconductor chip coupled to the second electrically conductive layer, and the drain bond pad of the second semiconductor chip coupled to the electrically conductive substrate, the second semiconductor chip configured from a III-nitride semiconductor material and coupled to the support in a flip-chip configuration.
15. The semiconductor component of claim 14 , wherein the electrically conductive substrate has a rectangular shape and a pedestal extending from a portion of the electrically conductive substrate.
16. The semiconductor component of claim 15 , further including:
a first clip electrically coupling the first electrically conductive layer to the first lead; and
a second clip electrically coupling the second electrically conductive layer to the second lead.
17. The semiconductor component of claim 16 , wherein the second clip is bonded to the second electrically conductive layer through a bonding agent and the source bond pad of the first semiconductor chip is bonded to the second electrically conductive layer through another bonding agent.
18. The semiconductor component of claim 16 , wherein the second clip is bonded to the second electrically conductive layer through a bonding agent and the source bond pad of the first semiconductor chip is bonded to the second clip through another bonding agent.
19. The semiconductor component of 18 , further including:
a fourth lead adjacent to and electrically isolated from the second electrically conductive layer;
a fifth lead adjacent to and electrically isolated from the second electrically conductive layer;
a bond wire coupled between the drain contact and the fifth lead; and
a portion of the second clip coupled between the drain contact of the first semiconductor chip and the fourth lead.
20. The semiconductor component of 16 , wherein the insulating material is a ceramic.