Bond-over-active circuity gallium nitride devices
View Patent ↗Implementations of semiconductor devices may include: a first layer with a plurality of cells, each cell having a drain finger, a source finger and a gate ring; a second layer having a drain pad and a source pad, the drain pad having a width and a source pad having a width substantially the same as the drain pad; wherein a width of each drain finger of the first layer is wider than a width of each source finger of the first layer; and wherein each drain pad is coupled to each drain finger through a first contact and the source pad is coupled to each source finger through a second contact, where a width of the first contact is wider than a width of the second contact.
1. A semiconductor device comprising:
a plurality of cells, each cell comprising at least one drain finger, at least one source finger and at least one gate;
at least one drain pad;
a plurality of source pads;
a gate bus coupled with the plurality of cells; and
at least one gate pad coupled to the gate bus;
wherein the drain pad is coupled to the at least one drain finger of each of the plurality of cells;
wherein each of the plurality of source pads is coupled to at least one source finger of each of the plurality of cells; and
wherein one of the drain pad, the plurality of source pads, and the gate pad is positioned over one of the drain finger, the source finger, and the gate.
2. The semiconductor device of claim 1 , wherein the plurality of cells are gallium nitride (GaN) high-electron mobility transistors (HEMT).
3. The semiconductor device of claim 1 , wherein the plurality of cells comprise a first group having a first length and a second group having a second length that is longer than the first length of the first group.
4. The semiconductor device of claim 3 , wherein the at least one drain pad is positioned over the second group of cells having the second length.
5. The semiconductor device of claim 1 , wherein a second drain pad is positioned opposite the at least one drain pad with the plurality of source pads between, the second drain pad coupled to the at least one drain pad through at least one drain bus.
6. The semiconductor device of claim 1 , wherein the gate bus is located under the plurality of source pads.
7. The semiconductor device of claim 1 , wherein the plurality of source pads are electrically coupled together during packaging.
8. The semiconductor of claim 7 , wherein the plurality of source pads are coupled to one another through wire bonding.
9. A semiconductor device comprising:
a plurality of cells, each cell comprising at least one drain finger, at least one source finger and at least one gate;
at least one drain pad;
a plurality of source pads;
a gate bus coupled with the plurality of cells; and
at least one gate pad coupled to the gate bus;
wherein the drain pad is coupled to the at least one drain finger of each of the plurality of cells;
wherein each of the plurality of source pads is coupled to at least one source finger of each of the plurality of cells;
wherein the plurality of source pads are electrically coupled together during packaging; and
wherein the plurality of cells comprise a first group having a first length and a second group having a second length that is longer than the first length of the first group.
10. The semiconductor device of claim 9 , wherein the plurality of cells are gallium nitride (GaN) high-electron mobility transistors (HEMT).
11. The semiconductor device of claim 10 , wherein the at least one drain pad is positioned over the second group of cells having the second length.
12. The semiconductor device of claim 9 , wherein a second drain pad is positioned opposite the at least one drain pad with the plurality of source pads between, the second drain pad coupled to the at least one drain pad through at least one drain bus.
13. The semiconductor device of claim 9 , wherein the gate bus is located under the plurality of source pads.
14. A semiconductor device comprising:
a plurality of cells, each cell comprising at least one drain finger, at least one source finger and at least one gate;
at least one drain pad;
a plurality of source pads;
a gate bus coupled with the plurality of cells; and
at least one gate pad coupled to the gate bus;
wherein the drain pad is coupled to the at least one drain finger of each of the plurality of cells;
wherein each of the plurality of source pads is coupled to at least one source finger of each of the plurality of cells; and
wherein the plurality of source pads are coupled to one another through one of wire bonding, bumps, and studs.
15. The semiconductor device of claim 14 , wherein the plurality of cells are gallium nitride (GaN) high-electron mobility transistors (HEMT).
16. The semiconductor device of claim 14 , wherein the plurality of cells comprise a first group having a first length and a second group having a second length that is longer than the first length of the first group.
17. The semiconductor device of claim 16 , wherein the at least one drain pad is positioned over the second group of cells having the second length.
18. The semiconductor device of claim 14 , wherein a second drain pad is positioned opposite the at least one drain pad with the plurality of source pads between, the second drain pad coupled to the at least one drain pad through at least one drain bus.
19. The semiconductor device of claim 14 , wherein the gate bus is located under the plurality of source pads.