Semiconductor nanoparticles and method of producing semiconductor nanoparticles
A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M 1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M 1 , an element M 2 , optionally an element M 3 , and an element Z, and have an average particle size of 50 nm or less. The element M 1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M 2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M 3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.
1. A method of producing semiconductor nanoparticles, the method comprising:
heating primary semiconductor nanoparticles and a salt of an element M 1 in a solvent at a temperature set in a range of 100° C. to 300° C., wherein
the primary semiconductor nanoparticles contain the element M l , an element M 2 , optionally an element M 3 , and an element Z, and have an average particle size of 50 nm or less, wherein
the element M 1 is at least one element selected from the group consisting of Ag, Cu, and Au,
the element M 2 is at least one element selected from the group consisting of Al, Ga, In, and Tl,
the element M 3 is at least one element selected from the group consisting of Zn and Cd, and
the element Z is at least one element selected from the group consisting of S, Se, and Te.
2. The method of producing semiconductor nanoparticles according to claim 1 , wherein the heating increases a ratio (M 1 /M 2 ) of the number of atoms of the element M l to the number of atoms of the element M 2 in the primary semiconductor nanoparticles.
3. The method of producing semiconductor nanoparticles according to claim 2 , wherein the ratio of the number of atoms of the element M 1 to the number of atoms of the element M 2 in the primary semiconductor nanoparticles is 0.500 or greater and less than 0.990, while the ratio of the number of atoms of the element M 1 to the number of atoms of the element M 2 in a resultant semiconductor nanoparticles is 0.990 or greater and 1.089 or less.
4. The method of producing semiconductor nanoparticles according to claim 1 , wherein the salt of the element M 1 is an organic acid salt.
5. The method of producing semiconductor nanoparticles according to claim 1 , further comprising producing the primary semiconductor nanoparticles.
6. The method of producing semiconductor nanoparticles according to claim 1 , wherein the solvent is a surface modifier or a solution containing a surface modifier.
7. The method of producing semiconductor nanoparticles according to claim 1 , wherein the primary semiconductor nanoparticles have at least one crystal structure selected from the group consisting of a tetragonal system, a hexagonal system, and an orthorhombic system.
8. The method of producing semiconductor nanoparticles according to claim 1 , wherein the solvent is at least one solvent selected from an amine having a hydrocarbon group with 4 to 20 carbon atoms and a thiol having a hydrocarbon group with 4 to 20 carbon atoms.
9. The method of producing semiconductor nanoparticles according to claim 1 , wherein the solvent is a mixed solvent of an amine having a hydrocarbon group with 4 to 20 carbon atoms and a thiol with a hydrocarbon group with 4 to 20 carbon atoms.
10. The method of producing semiconductor nanoparticles according to claim 1 , wherein the heating is performed under a pressure of 0.1 MPa or greater and 1.0 MPa or less.
11. A method of producing semiconductor nanoparticles, the method comprising:
heating primary semiconductor nanoparticles and a salt of an element M 2 in a solvent at a temperature set in a range of 100° C. to 300° C., wherein
the primary semiconductor nanoparticles contain an element M 1 , the element M 2 , optionally an element M 3 , and an element Z, and have an average particle size of 50 nm or less, wherein
the element M 1 is at least one element selected from the group consisting of Ag, Cu, and Au,
the element M 2 is at least one element selected from the group consisting of Al, Ga, In, and Tl,
the element M 3 is at least one element selected from the group consisting of Zn and Cd, and
the element Z is at least one element selected from the group consisting of S, Se, and Te.
12. The method of producing semiconductor nanoparticles according to claim 11 , wherein the heating decreases a ratio (M 1 /M 2 ) of the number of atoms of the element M 1 to the number of atoms of the element M 2 in the primary semiconductor nanoparticles.
13. The method of producing semiconductor nanoparticles according to claim 11 , wherein the salt of the element M 2 is an organic acid salt.
14. The method of producing semiconductor nanoparticles according to claim 11 , further comprising producing the primary semiconductor nanoparticles.
15. The method of producing semiconductor nanoparticles according to claim 11 , wherein the solvent is a surface modifier or a solution containing a surface modifier.
16. The method of producing semiconductor nanoparticles according to claim 11 , wherein the primary semiconductor nanoparticles have at least one crystal structure selected from the group consisting of a tetragonal system, a hexagonal system, and an orthorhombic system.
17. The method of producing semiconductor nanoparticles according to claim 11 , wherein the solvent is at least one solvent selected from an amine having a hydrocarbon group with 4 to 20 carbon atoms and a thiol having a hydrocarbon group with 4 to 20 carbon atoms.
18. The method of producing semiconductor nanoparticles according to claim 11 , wherein the solvent is a mixed solvent of an amine having a hydrocarbon group with 4 to 20 carbon atoms and a thiol with a hydrocarbon group with 4 to 20 carbon atoms.
19. The method of producing semiconductor nanoparticles according to claim 11 , wherein the heating is performed under a pressure of 0.1 MPa or greater and 1.0 MPa or less.