In-cell bypass diode

1. A bypass diode for a solar cell, the bypass diode comprising:

a semiconductor substrate having a first conductivity;

a first P-N junction disposed in or above a first portion of the semiconductor substrate;

a metallization structure disposed on at least a portion of the first P-N junction and on at least a portion of a second P-N junction disposed in or above a second portion of the semiconductor substrate so as to couple the first P-N junction to the second P-N junction above a first surface of the semiconductor substrate, wherein the first portion of the semiconductor substrate is physically isolated from the second portion so as to provide an in-cell bypass diode from the second portion, and wherein the first portion of the semiconductor substrate is physically isolated from the second portion by a scribe disposed in the semiconductor substrate through a surface of the semiconductor substrate opposite the first surface which includes the first P-N junction and the second P-N junction, wherein the scribe extends entirely through the substrate and is positioned opposite the first and second p-n junctions included on the first surface of the substrate.

2. The bypass diode of claim 1 , wherein the scribe is disposed along a first direction and along a second direction different from the first direction.

3. The bypass diode of claim 1 , wherein the first P-N junction above the first portion includes abutting P-type and N-type polysilicon regions.

4. The bypass diode of claim 1 , wherein the substrate is an N-type doped substrate.

5. The bypass diode of claim 1 , wherein the first P-N junction is disposed in the first portion of the semiconductor substrate, and wherein the second P-N junction is disposed in the second portion of the semiconductor substrate.

6. The bypass diode of claim 1 , wherein the first P-N junction is disposed above the first portion of the semiconductor substrate, and wherein the second P-N junction is disposed above the second portion of the semiconductor substrate.

7. The bypass diode of claim 1 , wherein the solar cell comprises two sub-cells each having a respective bypass diode that comprises a portion of the first P-N junction.

8. The bypass diode of claim 1 , wherein the bypass diode is located at an edge of the solar cell.

9. A solar cell comprising the bypass diode of claim 1 .

10. A bypass diode for a solar cell, the bypass diode comprising:

a semiconductor substrate having a first conductivity;

a first P-N junction disposed above a first portion of the semiconductor substrate, wherein the first P-N includes abutting P-type and N-type polysilicon regions;

a metallization structure disposed on at least a portion of the first P-N junction and on at least a portion of a second P-N junction disposed in or above a second portion of the semiconductor substrate so as to couple the first P-N junction to the second P-N junction above a first surface of the semiconductor substrate, wherein the first portion of the semiconductor substrate is physically isolated from the second portion so as to provide an in-cell bypass diode from the second portion, and wherein the first portion of the semiconductor substrate is physically isolated from the second portion by a scribe disposed in the semiconductor substrate through a surface of the semiconductor substrate opposite the first surface which includes the first P-N junction and the second P-N junction, wherein the scribe extends entirely through the substrate and is positioned opposite the first and second p-n junctions included on the first surface of the substrate, wherein the bypass diode is located at an edge of the solar cell.

11. The bypass diode of claim 10 , wherein the scribe is disposed along a first direction and along a second direction different from the first direction.

12. The bypass diode of claim 10 , wherein the substrate is an N-type doped substrate.

13. The bypass diode of claim 10 , wherein the second P-N junction is disposed above the second portion of the semiconductor substrate.

14. The bypass diode of claim 10 , wherein the solar cell comprises two sub-cells each having a respective bypass diode that comprises a portion of the first P-N junction.

15. A solar cell comprising the bypass diode of claim 10 .

16. A bypass diode for a solar cell, the bypass diode comprising:

a semiconductor substrate having a first conductivity;

a first P-N junction disposed in a first portion of the semiconductor substrate;

a metallization structure disposed on at least a portion of the first P-N junction and on at least a portion of a second P-N junction disposed in a second portion of the semiconductor substrate so as to couple the first P-N junction to the second P-N junction above a first surface of the semiconductor substrate, wherein the first portion of the semiconductor substrate is physically isolated from the second portion so as to provide an in-cell bypass diode from the second portion, and wherein the first portion of the semiconductor substrate is physically isolated from the second portion by a scribe disposed in the semiconductor substrate through a surface of the semiconductor substrate opposite the first surface which includes the first P-N junction and the second P-N junction, wherein the scribe extends entirely through the substrate and is positioned opposite the first and second p-n junctions included on the first surface of the substrate, wherein the bypass diode is located at an edge of the solar cell.

17. The bypass diode of claim 16 , wherein the scribe is disposed along a first direction and along a second direction different from the first direction.

18. The bypass diode of claim 16 , wherein the substrate is an N-type doped substrate.

19. The bypass diode of claim 16 , wherein the solar cell comprises two sub-cells each having a respective bypass diode that comprises a portion of the first P-N junction.

20. A solar cell comprising the bypass diode of claim 16 .