IP Library Granted Patent US 10,038,426
Granted Patent B2
US 10,038,426 · App. 15/220,327 · Granted Jul 31, 2018

Temperature compensated constant current system and method

Inventor: Jacques Jean Bertin (Pocatello, ID)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H03K3/011G05F3/265
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Quick Facts
Patent No.
US 10,038,426
App. No.
15/220,327
Granted
Jul 31, 2018
Kind
B2
Abstract

A current reference circuit includes a voltage generating device, a resistor, one or more diodes, and a thermal bridge including one or more metal alloy contacts disposed on a substrate. The voltage generating device and the resistor have similar temperature coefficients. The diodes are thermally connected to the voltage generating device through the substrate. The metal alloy contacts are coupled between the diodes and the resistor. The diodes form a reverse bias junction when the compensation circuit is energized such that the thermal bridge may provide thermal conduction between the voltage generating device and the resistor.

Claims (36)

1. A current reference circuit comprising:

a voltage generating device disposed in a substrate, the voltage generating device having a temperature dependent voltage;

a resistor having a proportional temperature dependent resistance proportional to the voltage generating device;

one or more diodes connected to the voltage generating device to thermally couple the resistor to the voltage generating device; and

a thermal bridge comprising one or more metal alloy contacts coupled between the one or more diodes and the resistor, the one or more diodes forming a reverse bias junction when the current reference circuit is energized, wherein the thermal bridge provides thermal conduction between the voltage generating device and the resistor for providing a reference current output wherein each of the metal alloy contacts are thermally coupled to an N-doped region of the one or more diodes.

2. The current reference circuit of claim 1 , wherein the resistor is electrically coupled to the voltage generating device such that, when the current reference circuit is energized, the reference current output is generated through the resistor that is compensated according to changes in temperature due to its temperature dependent resistance that is proportional to the voltage generating device.

3. The current reference circuit of claim 1 , further comprising a voltage measurement device that measures a voltage across the voltage generating device and a voltage across the resistor, wherein a current level through the resistor is proportional to a ratio of the voltage across the resistor and a voltage generated by the voltage generating device.

4. The current reference circuit of claim 1 , wherein the voltage generating device comprises a proportional to absolute temperature (PTAT) circuit.

5. A current reference circuit comprising:

a voltage generating device disposed in a substrate, the voltage generating device having a temperature dependent voltage wherein the voltage generating device comprises a proportional to absolute temperature (PTAT) circuit;

a resistor having a proportional temperature dependent resistance proportional to the voltage generating device;

a diode connected to the voltage generating device to thermally couple the resistor to the voltage generating device wherein the diode includes a plurality of diodes, and the one or more metal alloy contacts comprise a plurality of metal alloy contacts, each of the metal alloy contacts thermally coupled to corresponding N-doped regions of each of the diodes; and

a thermal bridge comprising one or more metal alloy contacts coupled between the plurality of diodes and the resistor, the plurality of diodes forming a reverse bias junction when the current reference circuit is energized, wherein the thermal bridge provides thermal conduction between the voltage generating device and the resistor for providing a reference current output.

6. The current reference circuit of claim 4 , wherein the one or more diodes comprise a single diode, and the one or more metal alloy contacts comprise a plurality of metal alloy contacts, each of the metal alloy contacts thermally coupled to an N-doped region of the single diode.

7. The current reference circuit of claim 1 , wherein the resistor is formed above the substrate, and the thermal bridge is formed between the resistor and the voltage generating device.

8. The current reference circuit of claim 1 , wherein the resistor is formed of an elongated section of metal alloy.

9. The current reference circuit of claim 1 , further comprising a temperature sensor to measure the current reference circuit at a plurality of differing temperature levels, and implementing a correction factor, using the differing temperature levels, to be applied to the current reference circuit while in operation.

10. A method comprising:

providing a voltage generating device having a temperature dependent voltage, a resistor having a temperature dependent resistance proportional to the voltage generating device, a diode connected to the voltage generating device to thermally coupled the resistor to the voltage generating device, and a thermal bridge comprising one or more metal alloy contacts coupled between the diode and the resistor;

forming the resistor above a substrate, and forming the thermal bridge between the resistor and the voltage generating device; and

configuring the voltage generating device such that a reverse bias junction is formed in the diode in response to energizing the voltage generating device, wherein the thermal bridge provides thermal conduction between the voltage generating device and the resistor for providing a reference current output.

11. The method of claim 10 , further comprising generating the reference current output through the resistor that is compensated according to changes in temperature, wherein the resistor is electrically coupled to the voltage generating device due to its temperature dependent resistance that is proportional to the voltage generating device.

12. The method of claim 10 , further comprising configuring a voltage measurement circuit to measure a voltage across the voltage generating device and a voltage across the resistor, wherein a current level through the resistor is proportional to a ratio of the voltage across the resistor and the voltage generated by the voltage generating device.

13. The method of claim 10 , wherein the voltage generating device comprises a proportional to absolute temperature (PTAT) circuit.

14. The method of claim 10 , further comprising forming the resistor from an elongated section of metal alloy.

15. The method of claim 10 , further comprising:

configuring a temperature sensor to measure the current reference circuit at a plurality of differing temperature levels; and

implementing a correction factor, using the differing temperature levels, to be applied to the current reference circuit while in operation.

16. A current reference circuit comprising:

a proportional to absolute temperature (PTAT) circuit disposed in a substrate, the PTAT circuit having a temperature dependent voltage;

a resistor having a proportional temperature dependent resistance proportional to the PTAT circuit, the resistor being electrically coupled to the PTAT circuit and formed from an elongated section of metal alloy;

a diode connected to the PTAT circuit to thermally couple the substrate and the PTAT circuit; and

a thermal bridge comprising one or more metal alloy contacts coupled between the diode and the resistor, the diode forming a reverse bias junction when the current reference circuit is energized, wherein the thermal bridge provides thermal conduction between the PTAT circuit and the resistor for providing a reference current output wherein the metal alloy contacts include a plurality of metal alloy contacts, each of the metal alloy contacts thermally coupled to an N-doped region of the diode.

17. The current reference circuit of claim 16 , wherein the diode comprises a plurality of diodes, and the one or more metal alloy contacts comprise a plurality of metal alloy contacts, each of the metal alloy contacts thermally coupled to corresponding N-doped regions of each of the plurality of diodes, wherein when the compensation circuit is energized, the reverse bias junction ensures that the plurality of diodes are substantially void of any operational role in the circuit.

18. The current reference circuit of claim 16 , wherein the diode comprises a single diode, and the one or more metal alloy contacts comprise a plurality of metal alloy contacts, each of the metal alloy contacts thermally coupled to an N-doped region of the single diode.

19. The current reference circuit of claim 16 , further comprising a temperature sensor to measure the current reference circuit at a plurality of differing temperature levels, and implementing a correction factor, using the differing temperature levels, to be applied to the current reference circuit while in operation.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 041187, FRAME 0295 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064151/0203 →
SECURITY INTEREST Recorded Dec 23, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 041187/0295 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2016
From: BERTIN, JACQUES JEAN
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 039264/0385 →
Continuity (1)
Related Publication 20180034447A1 · Feb 1, 2018
Cited By (1)
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