Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.
1. A semiconductor device comprising:
a transistor comprising:
an oxide semiconductor layer over a first insulating film;
a second insulating film over the oxide semiconductor layer;
a gate electrode over the second insulating film;
a third insulating film over the gate electrode;
a source electrode over the third insulating film; and
a drain electrode over the third insulating film,
wherein the source electrode is electrically connected to the oxide semiconductor layer, and
wherein the drain electrode is electrically connected to the oxide semiconductor layer, and
a capacitor comprising:
a first conductive layer over the first insulating film;
the third insulating film over the first conductive layer; and
a second conductive layer over the third insulating film,
wherein the first insulating film comprises silicon and oxygen,
wherein the oxide semiconductor layer comprises a first portion and a second portion,
wherein the gate electrode overlaps with the first portion, and
wherein a first resistivity of the first portion is higher than a second resistivity of the second portion.
2. The semiconductor device according to claim 1 , wherein the first conductive layer and the gate electrode include the same material.
3. The semiconductor device according to claim 1 , wherein the second conductive layer, the source electrode and the drain electrode include the same material.
4. The semiconductor device according to claim 1 , wherein the third insulating film comprises silicon and nitrogen.
5. A semiconductor device comprising:
a transistor comprising:
an oxide semiconductor layer over a first insulating film;
a second insulating film over the oxide semiconductor layer;
a gate electrode over the second insulating film;
a third insulating film over the gate electrode;
a source electrode over the third insulating film; and
a drain electrode over the third insulating film,
wherein the source electrode is electrically connected to the oxide semiconductor layer, and
wherein the drain electrode is electrically connected to the oxide semiconductor layer, and
a capacitor comprising:
a first conductive layer over the first insulating film;
the third insulating film over the first conductive layer; and
a second conductive layer over the third insulating film,
wherein the first insulating film comprises silicon and oxygen,
wherein the oxide semiconductor layer comprises a first portion, a second portion, and a third portion between the first portion and the second portion,
wherein the gate electrode overlaps with the first portion,
wherein a part of the third insulating film overlaps with the third portion,
wherein a first resistivity of the first portion is higher than a second resistivity of the second portion, and
wherein a third resistivity of the third portion is higher than the second resistivity.
6. The semiconductor device according to claim 5 , wherein the first conductive layer and the gate electrode include the same material.
7. The semiconductor device according to claim 5 , wherein the second conductive layer, the source electrode and the drain electrode include the same material.
8. The semiconductor device according to claim 5 , wherein the third insulating film comprises silicon and nitrogen.
9. A semiconductor device comprising:
a transistor comprising:
an oxide semiconductor layer over a first insulating film;
a second insulating film over the oxide semiconductor layer;
a gate electrode over the second insulating film;
a third insulating film over the gate electrode;
a source electrode over the third insulating film; and
a drain electrode over the third insulating film,
wherein the first insulating film comprises silicon and oxygen,
wherein the source electrode is electrically connected to the oxide semiconductor layer, and
wherein the drain electrode is electrically connected to the oxide semiconductor layer, and
a capacitor comprising:
a first conductive layer over the first insulating film;
the third insulating film over the first conductive layer; and
a second conductive layer over the third insulating film,
wherein the first insulating film comprises silicon and oxygen,
wherein the oxide semiconductor layer comprises a first portion and a second portion,
wherein the gate electrode overlaps with the first portion, and
wherein a first concentration of an element in the first portion is lower than a second concentration of the element of the second portion.
10. The semiconductor device according to claim 9 , wherein the first conductive layer and the gate electrode include the same material.
11. The semiconductor device according to claim 9 , wherein the second conductive layer, the source electrode and the drain electrode include the same material.
12. The semiconductor device according to claim 9 , wherein the third insulating film comprises silicon and nitrogen.
13. The semiconductor device according to claim 9 , wherein the element in the first portion and the second portion is hydrogen.
14. A semiconductor device comprising:
a transistor comprising:
an oxide semiconductor layer over a first insulating film;
a second insulating film over the oxide semiconductor layer;
a gate electrode over the second insulating film;
a third insulating film over the gate electrode;
a source electrode over the third insulating film; and
a drain electrode over the third insulating film,
wherein the source electrode is electrically connected to the oxide semiconductor layer, and
wherein the drain electrode is electrically connected to the oxide semiconductor layer, and
a capacitor comprising:
a first conductive layer over the first insulating film;
the third insulating film over the first conductive layer; and
a second conductive layer over the third insulating film,
wherein the first insulating film comprises silicon and oxygen,
wherein the oxide semiconductor layer comprises a first portion, a second portion, and a third portion between the first portion and the second portion,
wherein the gate electrode overlaps with the first portion,
wherein a part of the third insulating film overlaps with the second portion,
wherein a first concentration of an element in the first portion is lower than a second concentration of the element of the second portion, and
wherein a third concentration of the element of the second portion is lower than the second concentration.
15. The semiconductor device according to claim 14 , wherein the first conductive layer and the gate electrode include the same material.
16. The semiconductor device according to claim 14 , wherein the second conductive layer, the source electrode and the drain electrode include the same material.
17. The semiconductor device according to claim 14 , wherein the third insulating film comprises silicon and nitrogen.
18. The semiconductor device according to claim 14 , wherein the element in the first portion, the second portion and the third portion is hydrogen.