Recessed contact to semiconductor nanowires
A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.
1. A semiconductor nanowire device, comprising:
a single semiconductor nanowire having a bottom surface and a top surface and a pn junction or a p-i-n junction located between the bottom surface and the top surface;
an insulating material which surrounds the single semiconductor nanowire and extends above the top surface of the single semiconductor nanowire to create a recess between a sidewall of the insulating material and only the top surface of the single semiconductor nanowire; and
an electrode completely filling the recess and ohmically contacting the top surface of the single semiconductor nanowire, wherein the electrode comprises a transparent conductive oxide.
2. The semiconductor nanowire device of claim 1 , wherein the semiconductor nanowire device comprises a solar cell or a light emitting diode.
3. The semiconductor nanowire device of claim 1 , wherein the semiconductor nanowire device comprises a solar cell containing a plurality of semiconductor nanowires.
4. The semiconductor nanowire device of claim 3 , wherein the plurality of semiconductor nanowires comprise silicon or a MN semiconductor material.
5. The semiconductor nanowire device of claim 1 , wherein the single semiconductor nanowire has the pn junction located between the bottom surface and the top surface.
6. The semiconductor nanowire device of claim 1 , wherein the single semiconductor nanowire has the p-i-n junction located between the bottom surface and the top surface.