Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes loading, into a process chamber, a substrate including a first wiring layer having a first interlayer insulating film, a plurality of copper-containing films formed on the first interlayer insulating film and used as a wiring, an inter-wiring insulating film insulating between the plurality of copper-containing films, and a void formed between the plurality of copper-containing films, and a first diffusion barrier film formed on a portion of an upper surface of the copper-containing films to suppress diffusion of a component of the copper-containing films, and forming a second diffusion barrier film configured to suppress diffusion of a component of the copper-containing films on a surface of another portion, on which the first diffusion barrier film is not formed, in the copper-containing films.
1. A method of manufacturing a semiconductor device, comprising:
loading, into a process chamber, a substrate including a first wiring layer having a first interlayer insulating film, a plurality of copper-containing films formed on the first interlayer insulating film and used as a wiring, an inter-wiring insulating film insulating between the plurality of copper-containing films, and a void formed between the plurality of copper-containing films, and a first diffusion barrier film formed on a portion of an upper surface of the copper-containing films to suppress diffusion of a component of the copper-containing films; and
forming a second diffusion barrier film configured to suppress diffusion of a component of the copper-containing films on a surface of another portion, on which the first diffusion barrier film is not formed, in the copper-containing films,
wherein, in the act of forming the second diffusion barrier film, a metal-containing gas having a property of selecting the copper-containing film, rather than selecting the inter-wiring insulating film, is supplied to the substrate to form the second diffusion barrier film on the surface of another portion.
2. The method of claim 1 , wherein, in the act of forming the second diffusion barrier film, a hydrogen-containing gas is further supplied to the substrate.
3. The method of claim 2 , wherein, in the act of forming the second diffusion barrier film, the hydrogen-containing gas is supplied to the substrate, and thereafter, the metal-containing gas is supplied thereto.
4. The method of claim 3 , wherein, in the act of forming the second diffusion barrier film, the supply of the hydrogen-containing gas is stopped after the supply of the metal-containing gas is stopped.
5. The method of claim 2 , wherein, in the act of forming the second diffusion barrier film, the supply of the hydrogen-containing gas is stopped after the supply of the metal-containing gas is stopped.
6. The method of claim 1 , wherein the metal-containing gas is a transition metal-containing gas.
7. The method of claim 6 , wherein, in the act of forming the second diffusion barrier film, a hydrogen-containing gas is further supplied to the substrate.
8. The method of claim 7 , wherein, in the act of forming the second diffusion barrier film, the hydrogen-containing gas is supplied to the substrate, and thereafter, the metal-containing gas is supplied thereto.
9. The method of claim 8 , wherein, in the act of forming the second diffusion barrier film, the supply of the hydrogen-containing gas is stopped after the supply of the metal-containing gas is stopped.
10. The method of claim 7 , wherein, in the act of forming the second diffusion barrier film, the supply of the hydrogen-containing gas is stopped after the supply of the metal-containing gas is stopped.
11. The method of claim 1 , wherein a metal component in the metal-containing gas is any one of tungsten, tantalum, and molybdenum.
12. The method of claim 11 , wherein, in the act of forming the second diffusion barrier film, a hydrogen-containing gas is further supplied to the substrate.
13. The method of claim 12 , wherein, in the act of forming the second diffusion barrier film, the hydrogen-containing gas is supplied to the substrate, and thereafter, the metal-containing gas is supplied thereto.
14. The method of claim 13 , wherein, in the act of forming the second diffusion barrier film, the supply of the hydrogen-containing gas is stopped after the supply of the metal-containing gas is stopped.
15. The method of claim 12 , wherein, in the act of forming the second diffusion barrier film, the supply of the hydrogen-containing gas is stopped after the supply of the metal-containing gas is stopped.
16. The method of claim 1 , wherein the first diffusion barrier film is a silicon-containing film, and the second diffusion barrier film is a metal-containing film.
17. The method of claim 16 , wherein, in the act of forming the second diffusion barrier film, a hydrogen-containing gas is further supplied to the substrate.
18. The method of claim 17 , wherein, in the act of forming the second diffusion barrier film, the hydrogen-containing gas is supplied to the substrate, and thereafter, the metal-containing gas is supplied thereto.
19. The method of claim 18 , wherein, in the act of forming the second diffusion barrier film, the supply of the hydrogen-containing gas is stopped after the supply of the metal-containing gas is stopped.
20. The method of claim 17 , wherein, in the act of forming the second diffusion barrier film, the supply of the hydrogen-containing gas is stopped after the supply of the metal-containing gas is stopped.