IP Library › Granted Patent US 10,224,494
Granted Patent B2
US 10,224,494 · App. 15/223,176 · Granted Mar 5, 2019

Light-emitting element, display device, electronic device, and lighting device

Inventors: Takeyoshi Watabe (Kanagawa, JP); Satoshi Seo (Kanagawa, JP); Satomi Mitsumori (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/0085C07F15/0033C09K11/025C09K11/06G06F3/044G06F3/0416G09G3/3225H01L51/5004H01L51/5012H01L51/5028H05B33/14C09K2211/1007C09K2211/1059C09K2211/185G06F2203/04111G09G2300/0426G09G2300/0452G09G2300/0809G09G2310/0267G09G2310/0272G09G2310/08G09G2330/021G09G2330/04G09G2380/02H01L51/008H01L51/009H01L51/0067H01L51/0072H01L51/0074H01L51/0097H01L51/5016H01L51/524H01L2251/5384H01L2251/552
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Quick Facts
Patent No.
US 10,224,494
App. No.
15/223,176
Filed
Jul 29, 2016
Granted
Mar 5, 2019
Kind
B2
Art Unit
1786
USPC
428/690
Abstract

To provide a light-emitting element with high emission efficiency and low driving voltage. The light-emitting element includes a guest material and a host material. A LUMO level of the host material is higher than a LUMO level of the host material, and a HOMO level of the guest material is lower than a HOMO level of the host material. The guest material has a function of converting triplet excitation energy into light emission. The difference between a singlet excitation energy level and a triplet excitation energy level of the host material is greater than 0 eV and less than or equal to 0.2 eV. The energy difference between the LUMO level and the HOMO level of the host material is larger than or equal to light emission energy of the guest material.

Claims (47)

1. A light-emitting element comprising:

a first material; and

a second material,

wherein a LUMO level of the first material is higher than a LUMO level of the second material,

wherein a HOMO level of the first material is lower than a HOMO level of the second material, and

wherein the first material is configured to convert triplet excitation energy into light emission.

2. The light-emitting element according to claim 1 ,

wherein the second material has a difference between a singlet excitation energy level and a triplet excitation energy level of greater than 0 eV and less than or equal to 0.2 eV.

3. The light-emitting element according to claim 1 , further comprising a third material,

wherein a LUMO level of the third material is higher than the LUMO level of the second material, and

wherein a HOMO level of the third material is lower than the HOMO level of the second material.

4. The light-emitting element according to claim 1 ,

wherein an energy difference between the LUMO level and the HOMO level of the second material is larger than or equal to transition energy calculated from an absorption edge of an absorption spectrum of the first material.

5. The light-emitting element according to claim 1 ,

wherein an energy difference between the LUMO level and the HOMO level of the first material is larger than transition energy calculated from an absorption edge of an absorption spectrum of the first material by 0.4 eV or more.

6. The light-emitting element according to claim 1 ,

wherein an energy difference between the LUMO level and the HOMO level of the second material is larger than or equal to light emission energy of the first material.

7. The light-emitting element according to claim 1 ,

wherein an energy difference between the LUMO level and the HOMO level of the first material is larger than light emission energy of the first material by 0.4 eV or more.

8. The light-emitting element according to claim 1 ,

wherein the second material is configured to exhibit thermally activated delayed fluorescence at room temperature.

9. The light-emitting element according to claim 1 ,

wherein the second material is configured to supply excitation energy to the first material.

10. The light-emitting element according to claim 1 ,

wherein an emission spectrum of the second material has a region overlapping with an absorption band on the longest wavelength side in an absorption spectrum of the first material.

11. The light-emitting element according to claim 1 ,

wherein the first material comprises iridium.

12. The light-emitting element according to claim 1 ,

wherein the first material is configured to emit light.

13. The light-emitting element according to claim 1 ,

wherein the second material is configured to transport an electron, and

wherein the second material is configured to transport a hole.

14. The light-emitting element according to claim 1 ,

wherein the second material comprises a π-electron deficient heteroaromatic ring skeleton, and

wherein the second material comprises at least one of a π-electron rich heteroaromatic ring skeleton and an aromatic amine skeleton.

15. The light-emitting element according to claim 14 ,

wherein the π-electron deficient heteroaromatic ring skeleton comprises at least one of a diazine skeleton and a triazine skeleton, and

wherein the π-electron rich heteroaromatic ring skeleton comprises one or more selected from an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton.

16. A display device comprising:

the light-emitting element according to claim 1 ; and

at least one of a color filter and a transistor.

17. An electronic device comprising:

the display device according to claim 16 ; and

at least one of a housing and a touch sensor.

18. A lighting device comprising:

the light-emitting element according to claim 1 ; and

at least one of a housing and a touch sensor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 4, 2016
From: WATABE, TAKEYOSHI; SEO, SATOSHI; MITSUMORI, SATOMI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 039346/0079 →
Priority Claims (3)
JP 2015-157180 · Aug 7, 2015 · national
JP 2016-174893 · Sep 4, 2015 · national
JP 2015-237243 · Dec 4, 2015 · national
Continuity (1)
Related Publication 20170040553A1 · Feb 9, 2017
Cited By (3)
US 12,388,086 US 12,652,950 US 12,707,890