Semiconductor wafer and method of reducing wafer thickness with asymmetric edge support ring encompassing wafer scribe mark
A semiconductor wafer has a base material with a first thickness and first and second surfaces. A wafer scribe mark is disposed on the first surface of the base material. A portion of an interior region of the second surface of the base material is removed to a second thickness less than the first thickness, while leaving an edge support ring of the base material of the first thickness and an asymmetric width around the semiconductor wafer. The second thickness of the base material is less than 75 micrometers. The wafer scribe mark is disposed within the edge support ring. The removed portion of the interior region of the second surface of the base material is vertically offset from the wafer scribe mark. A width of the edge support ring is wider to encompass the wafer scribe mark and narrower elsewhere around the semiconductor wafer.
1. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including a base material with a first thickness between a first surface and second surface of the base material and an alignment notch formed in a side surface of the semiconductor wafer;
providing a wafer scribe identification mark on the first surface of the base material adjacent and aligned to the alignment notch; and
removing a portion of an interior region of the second surface of the base material to leave a second thickness of the base material less than the first thickness and an edge support ring of the base material of the first thickness and an asymmetric width around the semiconductor wafer, wherein a section of the edge support ring is wider at the wafer scribe identification mark and with a minimum width to accommodate the alignment notch and the wafer scribe identification mark completely within the edge support ring, and a width of the edge support ring is narrower elsewhere around the semiconductor wafer.
2. The method of claim 1 , wherein the second thickness of the base material is less than 75 micrometers.
3. The method of claim 1 , wherein the second thickness of the base material is 10-50 micrometers.
4. The method of claim 1 , wherein the removed portion of the interior region of the second surface of the base material is vertically offset from the wafer scribe identification mark.
5. The method of claim 1 , wherein the asymmetric width of the edge support ring is 3.0-5.0 millimeters to encompass the wafer scribe identification mark and 2.0-4.2 millimeters elsewhere around the semiconductor wafer.