Method for fabricating a semiconductor device

1. A method for fabricating semiconductor device, comprising:

providing a substrate having a fin-shaped structure thereon;

forming an epitaxial layer on the fin-shaped structure;

forming a first contact etch stop layer (CESL) on the epitaxial layer;

forming a source/drain region in the epitaxial layer; and

forming a second CESL after forming the source/drain region.

2. The method of claim 1 , further comprising a shallow trench isolation (STI) around the fin-shaped structure, the method comprises:

forming a spacer adjacent to the fin-shaped structure;

removing part of the fin-shaped structure;

forming the epitaxial layer on the fin-shaped structure;

forming the first CESL on the epitaxial layer, the spacer, and the STI;

forming a first cap layer on the first CESL;

forming the source/drain region in the epitaxial layer; and

forming the second CESL on the first cap layer.

3. The method of claim 2 , wherein the first cap layer comprises SiON or SiCON.

4. The method of claim 2 , further comprising forming a second cap layer on the epitaxial layer before forming the first CESL.

5. The method of claim 4 , wherein the second cap layer comprises SiO 2 .

6. The method of claim 1 , wherein the first CESL and the second CESL comprise same material.

7. The method of claim 1 , wherein the first CESL and the second CESL comprise SiCN or SiN.

8. The method of claim 1 , wherein the first CESL and the second CESL comprise same thickness.

9. The method of claim 1 , further comprising performing an anneal process after forming the source/drain region and before forming the second CESL.