MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SLURRY FOR CHEMICAL MECHANICAL POLISHING
In accordance with an embodiment, a manufacturing method of a semiconductor device includes using a slurry containing a cationic water-soluble polymer (A), iron nitrate (B), and abrasive grains (C) to chemically and mechanically polish a film to be polished. The film includes an insulating film provided with a groove or a hole, and a tungsten film to fill the groove or the hole. The chemical mechanical polishing includes a first polishing process to polish the tungsten film, and a second polishing process to polish the tungsten film and the insulating film together. The second polishing process is conducted after the first polishing process. The content of the (A) component in the slurry used in the second polishing process is less than 300 ppm, and the content of the (B) component is 100 ppm or less.
1 . A manufacturing method of a semiconductor device comprising:
using a slurry containing a cationic water-soluble polymer (A), iron nitrate (B), and abrasive grains (C) to chemically and mechanically polish a film to be polished, the film comprising an insulating film provided with a groove or a hole, and a tungsten film to fill the groove or the hole,
wherein the chemical mechanical polishing comprises a first polishing process to polish the tungsten film, and a second polishing process to polish the tungsten film and the insulating film together, the second polishing process being conducted after the first polishing process, and
the content of the (A) component in the slurry used in the second polishing process is less than 300 ppm, and the content of the (B) component is 100 ppm or less.
2 . The method of claim 1 ,
wherein the content of the (A) component in the slurry used in the second polishing process is 70 ppm or more.
3 . The method of claim 1 ,
wherein the content of the (B) component in the slurry used in the first polishing process is 60000 ppm or more.
4 . The method of claim 1 ,
wherein the content of the (B) component in the slurry used in the second polishing process is 1 ppm or more.
5 . The method of claim 1 ,
wherein the chemical mechanical polishing is conducted by use of a polishing pad which comprises air bubbles formed in the surface thereof.
6 . A manufacturing method of a semiconductor device comprising:
using a slurry containing a cationic water-soluble polymer (A), iron nitrate (B), and abrasive grains (C) to chemically and mechanically polish a film to be polished, the film comprising an insulating film provided with a groove or a hole, and a tungsten film to fill the groove or the hole,
wherein the chemical mechanical polishing comprises first polishing to polish the tungsten film, and second polishing to polish the tungsten film and the insulating film together, the second polishing being conducted after the first polishing, and
the second polishing comprises forming a protective film made of the cationic water-soluble polymer on the tungsten film in the groove or the hole.
7 . The method of claim 6 ,
wherein the content of the (A) component in the slurry used in the second polishing process is in a range of 70 ppm to 300 ppm.
8 . The method of claim 6 ,
wherein the content of the (B) component in the slurry used in the second polishing process is in a range of 1 ppm to 100 ppm.
9 . The method of claim 6 ,
wherein the content of the (B) component in the slurry used in the first polishing process is 60000 ppm or more.
10 . The method of claim 6 ,
wherein the chemical mechanical polishing is conducted by use of a polishing pad which comprises air bubbles formed in the surface thereof.
11 . The method of claim 6 ,
wherein the protective film is formed by use of polyethylenimine.
12 . A chemical mechanical polishing slurry used to simultaneously polish an insulating film and tungsten provided on a substrate, the slurry comprising
a cationic water-soluble polymer (A), iron nitrate (B), and abrasive grains (C),
wherein the content of the (A) component is less than 300 ppm, and the content of the (B) component is 100 ppm or less.