IP Library › Granted Patent US 10,597,335
Granted Patent B2
US 10,597,335 · App. 15/228,693 · Granted Mar 24, 2020

Seal coats to prevent silicon loss during re-melt infiltration of Si containing composites

Inventors: Daniel Gene Dunn (Guilderland, NY); Gregory Scot Corman (Ballston Lake, NY); Jared Hogg Weaver (Clifton Park, NY)
Assignee: GENERAL ELECTRIC COMPANY
C04B37/005B32B18/00C04B35/573C04B35/6316C04B35/806C04B37/001C23C16/325F01D5/005F01D5/282F01D5/284F01D9/041F01D25/162F02K1/82F02K9/97F23R3/007C04B2235/428C04B2235/5244C04B2235/616C04B2237/083C04B2237/365C04B2237/38F05D2220/32F05D2230/80F05D2240/11F05D2300/2261F05D2300/6033
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Quick Facts
Patent No.
US 10,597,335
App. No.
15/228,693
Granted
Mar 24, 2020
Kind
B2
Abstract

Provided is a method including obtaining ceramic matrix composite (CMC) with a first matrix portion including a silicon carbide and silicon phase dispersed therewithin, disposing a coating thereupon to form a sealed part, and forming thereupon another segment comprising a CMC, which may be another matrix portion including a silicon carbide and a silicon phase dispersed within therewithin. Also provided is a gas turbine component with a CMC segment including a matrix portion including a silicon carbide and a silicon phase dispersed therewithin, a sealing layer including silicon carbide enclosing the first segment, and a second segment on the sealing layer, wherein the second segment includes a melt-infiltrated CMC having a matrix portion including a silicon carbide and a silicon phase dispersed therewithin.

Claims (33)

1. A method comprising:

sealing a part, wherein the part comprises a first ceramic matrix composite (CMC) including a first matrix portion, wherein the first matrix portion comprises a first silicon carbide and a first silicon phase dispersed within the first silicon carbide, and sealing comprises disposing a coating on a surface of the part to form a sealed part, wherein the coating is configured to minimize wicking of the first silicon phase, and

forming on the sealed part a segment comprising a second CMC.

2. The method of claim 1 , wherein the coating comprises silicon carbide.

3. The method of claim 1 , wherein disposing comprises depositing silicon carbide as the coating on the surface of the part using chemical vapor deposition.

4. The method of claim 1 , wherein the segment comprising the second CMC includes a second matrix portion, wherein the second matrix portion comprises a second silicon carbide and a second silicon phase dispersed within the second silicon carbide.

5. The method of claim 4 , wherein forming comprises melt-infiltrating the second silicon carbide with the second silicon phase, and wherein melt-infiltrating comprises:

disposing silicon on the second silicon carbide,

heating the silicon disposed on the second silicon carbide to a first temperature equal to or greater than a melting point of the silicon disposed on the second silicon carbide to form molten silicon disposed on the second silicon carbide,

controlling the atmosphere about the part while heating the silicon disposed on the second silicon carbide to the first temperature,

allowing the molten silicon disposed on the second silicon carbide to infiltrate the second silicon carbide, and

cooling the part to a second temperature that is below the melting point of the silicon that infiltrated the second silicon carbide to form the second silicon phase.

6. The method of claim 5 , wherein the first temperature is between about 1300° C. and 1600° C.

7. The method of claim 6 , wherein the first temperature is between about 1380° C. and 1500° C.

8. The method of claim 4 , wherein forming comprises melt-infiltrating the second silicon carbide with the second silicon phase, and wherein melt-infiltrating comprises:

contacting the second silicon carbide with a wick,

wetting the wick with molten silicon at a first temperature equal to or greater than a melting point of silicon,

controlling the atmosphere about the part while contacting the second silicon carbide with the wick,

infiltrating the second silicon carbide with the molten silicon wherein infiltrating comprises wicking the molten silicon from the wick, and

cooling the part to a second temperature that is below the melting point of the silicon that infiltrated the second silicon carbide to form the second silicon phase.

9. The method of claim 8 , wherein the first temperature is between about 1380° C. and 1500° C.

10. The method of claim 1 , wherein the part is a gas turbine part.

11. The method of claim 10 , wherein the part is selected from the group consisting of a blade, a vane, a nozzle, a shroud, a combustor liner, and a center frame.

12. The method of claim 1 , wherein the part is a component in need of repair and sealing and forming comprise repairing the component.

13. The method of claim 1 , wherein forming comprises performing melt-infiltration.

14. The method of claim 13 , wherein the part is a gas turbine part selected from the group consisting of a blade, a vane, a nozzle, a shroud, a combustor liner, and a center frame.

15. The method of claim 1 , wherein the coating has a thermal expansion coefficient that is substantially similar to the thermal expansion coefficient of the first CMC.

16. The method of claim 1 , wherein the coating is non-porous.

17. The method of claim 1 , wherein sealing comprises disposing the coating on all surfaces of the part to form the sealed part.

18. A method comprising:

sealing a part, wherein the part comprises a first ceramic matrix composite (CMC) including a first matrix portion, wherein the first matrix portion comprises a first silicon carbide and a first silicon phase dispersed within the first silicon carbide, and sealing comprises disposing a coating on a surface of the part to form a sealed part, disposing comprises performing chemical vapor deposition, and the coating comprises silicon carbide, and wherein the coating is configured to minimize wicking of the first silicon phase;

forming, on the sealed part, a segment comprising a second CMC having a second matrix portion, wherein the second matrix portion comprises a second silicon carbide and a second silicon phase dispersed within the silicon carbide, and wherein forming comprises performing melt infiltration.

19. The method of claim 18 , wherein the part is a gas turbine part selected from the group consisting of a blade, a vane, a nozzle, a shroud, a combustor liner, and a center frame.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 5, 2016
From: DUNN, DANIEL GENE; CORMAN, GREGORY SCOT; WEAVER, JARED HOGG
To: GENERAL ELECTRIC COMPANY
Reel/Frame 039352/0520 →
Continuity (1)
Related Publication 20180037513A1 · Feb 8, 2018
Cited By (2)
US 12,384,727 US 12,606,497