Semiconductor device and manufacturing method thereof
Provided is a semiconductor device which allows an alignment mark used for the manufacturing of a solid-state image sensor (semiconductor device) having a back-side-illumination structure to be formed in a smaller number of steps. The semiconductor device includes a semiconductor layer having a first main surface and a second main surface opposing the first main surface, a plurality of photodiodes which are formed in the semiconductor layer and in each of which photoelectric conversion is performed, a light receiving lens disposed over the second main surface of the semiconductor layer to supply light to each of the photodiodes, and a mark for alignment formed inside the semiconductor layer. The mark for alignment is formed so as to extend from the first main surface toward the second main surface and have a protruding portion protruding from the second main surface in a direction toward where the light receiving lens is disposed.
1. A semiconductor device, comprising:
a semiconductor layer having a first main surface and a second main surface opposing the first main surface;
a plurality of light receiving elements which are formed in the semiconductor layer and in each of which photoelectric conversion is performed;
a light receiving lens disposed over the second main surface or the semiconductor layer to supply light to each of the light receiving elements; and
a mark for alignment formed inside the semiconductor layer, wherein
the mark for alignment extends from the first main surface toward the second main surface,
the mark for alignment includes a protruding portion formed so as to protrude from the second main surface in a direction toward where the light receiving lens is disposed,
the mark for alignment comprises a first layer including a conductive film or a semiconductor film, the first layer filling at least a part of an inside of a trench formed in the semiconductor layer,
the mark for alignment further comprises a second layer including an insulating film, the second layer being formed in the first layer,
the mark for alignment comprises the first and second layers inside the trench portion, and
the protruding portion includes the first layer.
2. The semiconductor device according to claim 1 , wherein the second layer is a silicon oxide film or a silicon nitride film.
3. The semiconductor device according to claim 1 , wherein the mark for alignment is formed only in a part of an outer peripheral portion of the semiconductor layer in planar view.
4. The semiconductor device according to claim 1 , wherein the protruding portion of the mark for alignment comprises the first layer only.
5. The semiconductor device according to claim 1 , wherein
the first layer is the conductive film or the semiconductor film, and
the second layer is the insulating film.