Synthesis and processing of Q-carbon, graphene, and diamond
Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.
1. A process comprising:
depositing amorphous carbon on a substrate;
melting the amorphous carbon at a temperature no greater than about 4000K in an environment at ambient temperature and pressure; and
quenching the melted amorphous carbon to create a form of carbon harder than diamond, diamond, or graphene.
2. The process of claim 1 , wherein the quenching creates a composite of the form of carbon harder than diamond and diamond.
3. The process of claim 1 , wherein the quenching creates the form of carbon harder than diamond.
4. The process of claim 1 , wherein the quenching creates diamond.
5. The process of claim 1 , wherein the quenching creates graphene.
6. The process of claim 1 , further comprising:
melting the form of carbon harder than diamond; and
quenching the melted form of carbon harder than diamond to create diamond.
7. The process of claim 6 , wherein the created diamond is a nanodot, nanodiamond, microdiamond, nanoneedle, microneedle, or large area single crystal film.
8. The process of claim 1 , further comprising epitaxially growing the created form of carbon harder than diamond, diamond, or graphene using the substrate as a template for epitaxial growth.
9. The process of claim 7 , wherein the created diamond is epitaxial single crystal.
10. A process comprising:
melting amorphous carbon of an amorphous carbon film at a temperature no greater than about 4000K by a laser pulse in an environment at ambient temperature and pressure; and
quenching the melted amorphous carbon to form a form of carbon harder than diamond, graphene, or diamond.
11. The process of claim 10 , wherein the quenching creates a composite of the form of carbon harder than diamond and diamond.
12. The process of claim 10 , wherein the quenching creates the form of carbon harder than diamond.
13. The process of claim 10 , wherein the quenching creates diamond.
14. The process of claim 10 , wherein the quenching creates graphene.
15. The process of claim 10 , further comprising:
melting the form of carbon harder than diamond; and
quenching the melted form of carbon harder than diamond to create diamond.
16. The process of claim 10 , further comprising:
melting the form of carbon harder than diamond; and
quenching the melted form of carbon harder than diamond to create a nanodot, nanodiamond, microdiamond, nanoneedle, microneedle, or large area single crystal film.
17. The process of claim 10 , further comprising:
depositing a film of amorphous carbon on a substrate; and
epitaxially growing the created form of carbon harder than diamond, diamond, or graphene using the substrate as a template for epitaxial growth.
18. A process comprising:
depositing a film of amorphous carbon on a substrate by pulsed laser deposition;
melting a first portion of amorphous carbon of the amorphous carbon film at a temperature no greater than about 4000K by a first laser pulse in an environment at ambient temperature and pressure;
quenching the first portion of amorphous carbon to form a form of carbon harder than diamond;
melting a first portion of the form of carbon harder than diamond by a second laser pulse;
quenching the melted first portion of form of carbon harder than diamond to create a first diamond portion;
melting a second portion of the form of carbon harder than diamond by a third laser pulse; and
quenching the melted second portion of the form of carbon harder than diamond to create a second diamond portion,
the first and second portions of diamond forming a nanodiamond, microdiamond, nanoneedle, microneedle, or large area single crystal film.