Composition and method of forming pattern using composition

1. A semiconductor device production composition, comprising:

a product obtained by mixing a metal compound and a compound represented by Formula (1) in a first organic solvent;

a second organic solvent; and

water:

R—O—O—R′  (1)

wherein, in Formula (1), R and R′ each represent a hydrogen atom, and

wherein a weight of the second organic solvent is larger than a weight of the water.

2. The semiconductor device production composition according to claim 1 , wherein the product is prepared by further mixing a compound represented by Formula (2):

R 1 X) n   (2)

wherein, in Formula (2), R 1 represents a n-valent organic group; X represents —OH, —COOH, —NCO, or —NR a R b ; R a and R b each independently represent a hydrogen atom or a monovalent organic group; n is an integer of 2 to 4; and each X is the same as or different from each other.

3. The semiconductor device production composition according to claim 1 , wherein the metal compound is represented by Formula (3):

[MLaXb]  (3)

wherein, in Formula (3), M represents a titanium atom, an aluminum atom, a zirconium atom, a tantalum atom, a hafnium atom, a molybdenum atom, or a tungsten atom; L represents a multidentate ligand; a is an integer of 1 to 3; when a is 2 or more, each L is the same as or different from each other; X represents a halogen ligand, a hydroxo ligand, a carboxy ligand, an alkoxy ligand, a carboxylate ligand, or an amide ligand; b is an integer of 2 to 6; each X is the same as or different form each other; and a+b is 7 or less.

4. The semiconductor device production composition according to claim 1 , wherein the first organic solvent is the same as the second organic solvent.

5. The semiconductor device production composition according to claim 1 , for use in a multilayer resist process.

6. The semiconductor device production composition according to claim 2 , wherein the metal compound is represented by Formula (3):

[MLaXb]  (3)

wherein, in Formula (3), M represents a titanium atom, an aluminum atom, a zirconium atom, a tantalum atom, a hafnium atom, a molybdenum atom, or a tungsten atom; L represents a multidentate ligand; a is an integer of 1 to 3; when a is 2 or more, each L is the same as or different from each other; X represents a halogen ligand, a hydroxo ligand, a carboxy ligand, an alkoxy ligand, a carboxylate ligand, or an amide ligand; b is an integer of 2 to 6; each X is the same as or different form each other; and a+b is 7 or less.

7. A pattern formation method, comprising:

applying a semiconductor device production composition onto a top face of a substrate to form a coated film on the top face of the substrate;

forming a resist pattern on a top face of the coated film; and

forming a pattern on the substrate by dry-etching the coated film one or more times, using the resist pattern as a mask,

wherein the semiconductor device production composition comprises:

a product obtained by mixing a metal compound and a compound represented by Formula (1) in a first organic solvent; and

a second organic solvent:

R—O—O—R′  (1)

wherein, in Formula (1), R and R′ each independently represent a hydrogen atom, a linear or cyclic alkyl group having a carbon number of 2 to 20, a linear or cyclic alkylcarbonyl group having a carbon number of 2 to 20, an aryl group having a carbon number of 6 to 20, or an aryloxy group having a carbon number of 6 to 20, and part of the hydrogen atoms in the cyclic alkyl, cyclic alkylcarbonyl, aryl, or aryloxy group are unsubstituted or substituted with substituent groups.

8. The pattern formation method according to claim 7 , wherein the forming of the resist pattern comprises:

forming an antireflective film on the coated film; and

forming the resist pattern on the antireflective film laminated.

9. The pattern formation method according to claim 7 , further comprising:

forming a resist lower-layer film on the substrate, wherein the semiconductor device production composition is applied on the resist lower-layer film.

10. The pattern formation method according to claim 7 , wherein the product is prepared by further mixing a compound represented by Formula (2):

R 1 X) n   (2)

wherein, in Formula (2), R 1 represents a n-valent organic group; X represents —OH, —COOH, —NCO, or —NR a R b ; R a and R b each independently represent a hydrogen atom or a monovalent organic group; n is an integer of 2 to 4; and each X is the same as or different from each other.

11. The pattern formation method according to claim 7 , wherein the metal compound is represented by Formula (3):

[MLaXb]  (3)

wherein, in Formula (3), M represents a titanium atom, an aluminum atom, a zirconium atom, a tantalum atom, a hafnium atom, a molybdenum atom, or a tungsten atom; L represents a multidentate ligand; a is an integer of 1 to 3; when a is 2 or more, each L is the same as or different from each other; X represents a halogen ligand, a hydroxo ligand, a carboxy ligand, an alkoxy ligand, a carboxylate ligand, or an amide ligand; b is an integer of 2 to 6; each X is the same as or different form each other; and a+b is 7 or less.

12. The pattern formation method according to claim 7 , wherein in Formula (1), R and R′ each represent a hydrogen atom.

13. The pattern formation method according to claim 7 , wherein comprising water, wherein a weight of the second organic solvent is larger than a weight of the water.

14. The pattern formation method according to claim 7 , wherein the first organic solvent is the same as the second organic solvent.