Flip-chip LED with barrier structure
A flip-chip light LED includes: a substrate; an epitaxial layer on the substrate, wherein, the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer and a light emitting layer between the first semiconductor layer and the second semiconductor layer; at least one opening structure, which is at the epitaxial layer edge and extends to the substrate surface, making parts of the side wall of the epitaxial layer and the substrate surface exposed, such that the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer on the opening structure as the metal electrode isolating layer.
1. A flip-chip light emitting diode (LED) comprising:
a single-layer substrate;
an epitaxial layer over the substrate, wherein the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer;
a plurality of opening structures at an edge of the epitaxial layer and extending to a surface of the substrate, thereby exposing a portion of a sidewall of the epitaxial layer and a portion of the surface of the substrate, such that the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure, wherein the epitaxial bulk layer is completely isolated from the barrier structure and is different from the barrier structure;
a metal electrode formed on a portion of the epitaxial bulk layer;
a reflective layer formed over the epitaxial layer prior to the plurality of opening structures are formed such that the reflective layer is discontinuous laterally over a bottom of the plurality of opening structures and is present between two of the plurality of opening structures; and
an insulating layer over the opening structure as an isolating layer for the metal electrode.
2. The flip-chip LED of claim 1 , wherein the barrier structure is configured to avoid short-circuit caused by overflow of solder paste or other solid crystal conductive materials during usage of the flip-chip LED even if the insulating layer over the opening structure breaks, and improve reliability and yield of the flip-chip LED; and wherein the substrate is a single-layer sapphire substrate.
3. The flip-chip LED of claim 1 , wherein the opening structure comprises at least one of a “U”-shaped, a “V”-shaped, or a “W”-shaped opening.
4. The flip-chip LED of claim 1 , wherein the reflective layer is a metal reflective layer, a distributed Bragg reflective layer, or an omni-directional reflective layer.
5. The flip-chip LED of claim 1 , wherein the metal electrode is formed on the portion of the epitaxial layer after the insulating layer is formed.
6. A fabrication method of a flip-chip light emitting diode (LED), the method comprising:
1) providing a single-layer substrate;
2) fabricating an epitaxial layer over the substrate, wherein the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer;
3) etching a plurality of opening structures downward from a surface of the epitaxial layer, to a surface of the substrate surface, thereby exposing a portion of a sidewall of the epitaxial layer and a portion of the surface of the substrate, such that the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and
4) depositing an insulating layer on the opening structure as a metal electrode isolating layer;
wherein the fabricated flip-chip LED comprises:
the substrate;
the epitaxial layer over the substrate, wherein the epitaxial layer comprises: the first semiconductor layer, the second semiconductor layer, and the light emitting layer between the first semiconductor layer and the second semiconductor layer;
the plurality of opening structures at an edge of the epitaxial layer and extending to the surface of the substrate, thereby exposing the portion of the sidewall of the epitaxial layer and the portion of the surface of the substrate, such that the epitaxial layer is divided into the epitaxial bulk layer and the barrier structure, wherein the epitaxial bulk layer is completely isolated from the barrier structure and is different from the barrier structure;
a reflective layer formed over the epitaxial layer prior to the plurality of opening structures are formed such that the reflective layer is discontinuous laterally over a bottom of the a plurality of opening structures and is present between two of the plurality of opening structures; and
the insulating layer over the opening structure as a metal electrode isolating layer;
the fabrication method further comprising forming a metal electrode on a portion of the epitaxial layer after the insulating layer is formed.
7. The fabrication method of claim 6 , wherein the barrier structure is configured to avoid a short-circuit of the flip-chip LED caused by overflow of solder paste or other solid crystal conductive materials during usage of the flip-chip LED even if the insulating layer over the opening structure breaks, and improve reliability and yield of the flip-chip LED.
8. The fabrication method of claim 6 , wherein the opening structure comprises at least one of a “U”-shaped, a “V”-shaped, or a “W”-shaped opening.
9. A light emitting system comprising a plurality of flip-chip light emitting diodes (LEDs), each LED comprising:
a single-layer substrate;
an epitaxial layer over the substrate, wherein the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer;
a plurality of opening structures at an edge of the epitaxial layer and extending to a surface of the substrate, thereby exposing a portion of a sidewall of the epitaxial layer and a portion of the surface of the substrate, such that the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure, wherein the epitaxial bulk layer is completely isolated from the barrier structure and is different from the barrier structure;
a metal electrode formed on a portion of the epitaxial bulk layer;
a reflective layer formed over the epitaxial layer prior to the plurality of opening structures are formed such that the reflective layer is discontinuous laterally over a bottom of the a plurality of opening structures and is present between two of the plurality of opening structures; and
an insulating layer over the opening structure as an isolating layer for the metal electrode.
10. The system of claim 9 , wherein the barrier structure is configured to avoid short-circuit caused by overflow of solder paste or other solid crystal conductive materials during usage of the flip-chip LED even if the insulating layer over the opening structure breaks, and improve reliability and yield of the flip-chip LED.
11. The system of claim 9 , wherein the opening structure comprises at least one of a “U”-shaped, a “V”-shaped, or a “W”-shaped opening.
12. The system of claim 9 , wherein the reflective layer is a metal reflective layer, a distributed Bragg reflective layer, or an omni-directional reflective layer.
13. The system of claim 9 , wherein the metal electrode is formed on the portion of the epitaxial layer after the insulating layer is formed.