Flyback diode and on-board power source device
A SiC Schottky-barrier diode and a SiPiN diode are connected in parallel. Due to a difference in their thermal properties, a relatively large current flows in the SiPiN diode at a high temperature in which electro migration progresses easily in a solder layer, and the progression of the electro migration is suppressed. At a low temperature in which the electro migration does not progress so much, only a relatively small current flows in the SiPiN diode, and a loss suppression by the SiC Schottky-barrier diode is achieved.
1. A flyback diode in which a current caused by electromotive force generated when a current flowing in a coil is switched on or off flows, the flyback diode comprising:
a Schottky-barrier diode comprising a SiC substrate; and
a PiN diode comprising a Si substrate and connected in parallel with the Schottky-barrier diode,
wherein
at least one of an anode electrode and a cathode electrode of the Schottky-barrier diode is a flat electrode provided on a surface of the SiC substrate, and
a solder layer is bonded to the flat electrode.
2. The flyback diode according to claim 1 , wherein
a current density of a current that flows in the Schottky-barrier diode is equal to or less than 500 A/cm 2 .
3. The flyback diode according to claim 1 , wherein
the Schottky-barrier diode and the PiN diode are sealed by sealing resin.
4. An on-board power source device comprising:
the flyback diode according to claim 1 ,
wherein
an anode of the flyback diode is connected to a positive electrode of a battery through the coil,
a cathode of the flyback diode is connected to a negative electrode of the battery through an inverter, and
the inverter is connected to a traction motor.
5. A flyback diode in which a current caused by electromotive force generated when a current flowing in a coil is switched on or off flows, the flyback diode comprising:
a Schottky-barrier diode comprising a SiC substrate; and
a PiN diode comprising a Si substrate and connected in parallel with the Schottky-barrier diode,
wherein
at least one of an anode electrode and a cathode electrode of the Schottky-barrier diode is a flat electrode provided on a surface of the SiC substrate,
a solder layer is bonded to the flat electrode,
an area of the flat electrode is not larger than an area of the SiC substrate, and
an area of the solder layer is not larger than the area of the SiC substrate.
6. The flyback diode according to claim 5 , wherein
a current density of a current that flows in the Schottky-barrier diode is equal to or less than 500 A/cm 2 .
7. The flyback diode according to claim 5 , wherein
the Schottky-barrier diode and the PiN diode are sealed by sealing resin.
8. The flyback diode according to claim 5 , wherein a current density flowing through the SiC substrate and a current density flowing through the solder layer are substantially equal.
9. An on-board power source device comprising:
the flyback diode according to claim 5 ,
wherein
an anode of the flyback diode is connected to a positive electrode of a battery through the coil,
a cathode of the flyback diode is connected to a negative electrode of the battery through an inverter, and
the inverter is connected to a traction motor.