Method for fabricating semiconductor device
According to one embodiment, a method for fabricating a semiconductor device includes performing a back surface processing to remove at least one of a scratch and a foreign material formed on a back surface of a substrate to be processed, a front surface of the substrate being retained in a non-contact state, contacting the back surface of the substrate to a stage to be retained, and providing a pattern on the front surface of the substrate by using lithography.
1. A method for fabricating a semiconductor device, comprising:
retaining a substrate by contacting a side surface of the substrate with a retainer, the side surface being disposed between a front surface and a back surface of the substrate;
contacting a polishing head having a diameter smaller than a diameter of the substrate onto the back surface of the substrate to polish the substrate by sliding on the back surface of the substrate; and
providing a pattern on the front surface of the substrate after the polishing;
wherein liquid supplied to a static pressure bearing located facing the front surface of the substrate contacts the front surface of the substrate to apply pressure on the front surface of the substrate in the polishing of the back surface of the substrate such that the liquid presses on at least a first area on the front surface of the substrate opposite to a second area on the back surface of the substrate that is contacted by a center of the polishing head so as to receive polishing load applied to the back surface of the substrate, and
wherein when the polishing is performed, the static pressure bearing is configured to move upward toward the substrate and to move downward after the polishing is finished.
2. The method of claim 1 , wherein
the liquid is contacted to the surface of the substrate in a state that the static pressure bearing is located under the substrate in the polishing.
3. The method of claim 1 , wherein
the polishing load applied to the back surface of the substrate is not less than 100 hPa in the polishing.
4. The method of claim 3 , wherein
the polishing load applied to the back surface of the substrate is not less than 100 hPa and not more than 500 hPa in the polishing.
5. The method of claim 1 , wherein
the retainer is located at an upper side of the static pressure bearing.
6. The method of claim 1 , wherein
the polishing is performed with feeding a polishing liquid on the back surface of the substrate.
7. The method of claim 1 , wherein
a polishing amount of the back surface of the substrate is not less than 50 nm in the polishing.
8. The method of claim 1 , wherein
the back surface of the substrate is polished by using a polishing tape in the polishing.
9. The method of claim 1 , wherein
the liquid is water or oil.
10. The method of claim 1 , further including
cleaning the substrate and successively drying the substrate after the polishing and before the providing of the pattern.
11. The method of claim 10 , wherein
the polishing, the cleaning and the drying are performed in same chamber.