Wiring pattern production method and transistor production method
A wiring pattern production method includes forming, on a substrate, a precursor film for a plating base film including a first formation material having an amino group protected by a photoreactive protecting group, forming a photoresist layer including a photoresist material on a surface of the precursor film, exposing the photoresist layer with a desired pattern of light, exposing the precursor film with a desired pattern of light to form the plating base film, developing the exposed photoresist layer, removing a deprotected protecting group, and depositing an electroless plating catalyst on the exposed surface of the plating base film.
1. A wiring pattern production method comprising:
forming, on a substrate, a precursor film for a plating base film including a first formation material having an amino group protected by a photoreactive protecting group, the first formation material being a silane coupling agent having an amino group protected by the protecting group;
forming a photoresist layer including a photoresist material on a surface of the precursor film;
exposing the photoresist layer with a desired pattern of light;
exposing the precursor film with a desired pattern of light to form the plating base film;
developing the exposed photoresist layer and removing a deprotected protecting group; and
depositing an electroless plating catalyst on the exposed surface of the plating base film.
2. The wiring pattern production method according to claim 1 ,
wherein the exposing of the photoresist layer and the exposing of the precursor film are simultaneously performed.
3. The wiring pattern production method according to claim 1 ,
wherein, after removing the photoresist layer, a remainder of the precursor film is further exposed to light.
4. The wiring pattern production method according to claim 1 ,
wherein the protecting group is an o-nitrobenzyl group or a group having an o-nitrobenzyl skeleton.
5. The wiring pattern production method according to claim 1 ,
wherein the amino group is a group represented by —NH 2 .
6. The wiring pattern production method according to claim 1 ,
wherein the precursor film includes a group having at least one of a nitrogen atom and a sulfur atom and the group having the at least one of the nitrogen atom and the sulfur atom further includes a second formation material which is not protected by the protecting group.
7. The wiring pattern production method according to claim 6 ,
wherein the second formation material is a silane coupling agent having the group having the at least one of the nitrogen atom and the sulfur atom.
8. The wiring pattern production method according to claim 1 ,
wherein the substrate is made of a nonmetallic material.
9. The wiring pattern production method according to claim 8 ,
wherein the substrate is made of a resin material.
10. The wiring pattern production method according to claim 9 ,
wherein the substrate has flexibility.
11. A transistor production method comprising:
forming at least one of a gate electrode, a source electrode, and a drain electrode on a substrate using the wiring pattern production method according to claim 1 .
12. The transistor production method according to claim 11 , comprising:
forming the gate electrode on the substrate;
covering the gate electrode to form a layer including an insulator layer; and
forming the source electrode and the drain electrode on a surface of the layer including the insulator layer.
13. The transistor production method according to claim 11 , comprising:
forming the source electrode and the drain electrode on the substrate;
covering the source electrode and the drain electrode to form a layer including an insulator layer; and
forming the gate electrode on a surface of the layer including the insulator layer.
14. A wiring pattern production method comprising:
forming, on a substrate, a precursor film for a plating base film including a first formation material having an amino group protected by a photoreactive protecting group;
forming a photoresist layer including a photoresist material on a surface of the precursor film;
exposing the photoresist layer with a desired pattern of light;
exposing the precursor film with a desired pattern of light to form the plating base film;
developing the exposed photoresist layer and removing a deprotected protecting group; and
depositing an electroless plating catalyst on the exposed surface of the plating base film,
wherein, after removing the photoresist layer, a remainder of the precursor film is further exposed to light.
15. A wiring pattern production method comprising:
forming, on a substrate, a precursor film for a plating base film including a first formation material having an amino group protected by a photoreactive protecting group;
forming a photoresist layer including a photoresist material on a surface of the precursor film;
exposing the photoresist layer with a desired pattern of light;
exposing the precursor film with a desired pattern of light to form the plating base film, developing the exposed photoresist layer and removing a deprotected protecting group; and
depositing an electroless plating catalyst on the exposed surface of the plating base film;
wherein the precursor film includes a group having at least one of a nitrogen atom and a sulfur atom and the group having the at least one of the nitrogen atom and the sulfur atom further includes a second formation material which is not protected by the protecting group.