Semiconductor device
A semiconductor device includes a first semiconductor layer, a first electrode above and electrically connected to the first semiconductor layer, a second electrode above the first semiconductor layer and electrically connected to the first semiconductor layer, a first insulating layer above the first semiconductor layer between the first and second electrodes, and a third electrode. The second electrode is spaced from the first electrode along the first semiconductor layer. The third electrode includes a first portion above the first insulating layer between the first and second electrodes, and a second portion between the first portion and the second electrode and extending from the first portion in the direction of, and spaced from, the second electrode. The distance between the first semiconductor layer and an adjacent curved surface of the second portion gradually increases from the first portion to the end of the second portion distal the first portion.
1. A semiconductor device, comprising:
a first semiconductor layer;
a first electrode above the first semiconductor layer and electrically connected to the first semiconductor layer;
a second electrode above the first semiconductor layer and electrically connected to the first semiconductor layer, the second electrode spaced from the first electrode along the first semiconductor layer;
a first insulating layer above the first semiconductor layer between the first and the second electrodes; and
a third electrode including:
a first portion including a part directly contacting the first insulating layer between the first and the second electrodes; and
a second portion between the first portion and the second electrode, the second portion extending from the first portion in a direction towards the second electrode, wherein
the first portion includes only portions of the third electrode that are directly above the part directly contacting the first insulating layer;
the distance between the first semiconductor layer and a lower surface of the second portion gradually increases from the first portion to an end of the second portion that is distal to the first portion, and
the entire lower surface of the second portion is curved.
2. The semiconductor device according to claim 1 ,
wherein the lower surface of the second portion comprises a first sub-portion curved in an outwardly convex shape and a second sub-portion extending from the first sub-portion in the direction of the second electrode and curved in an inwardly convex shape.
3. The semiconductor device according to claim 1 ,
wherein the lower surface of the second portion includes a first curved surface curved in an inwardly convex shape and a second curved surface extending from the first curved surface towards the second electrode and curved in an outwardly convex shape.
4. The semiconductor according to claim 1 , wherein,
the part of first portion directly contacting the is first insulating layer is a gate electrode.
5. The semiconductor device according to claim 1 , wherein the second portion has a uniform thickness in the direction perpendicular to the surface of the first insulating layer.
6. The semiconductor device according to claim 1 , further comprising:
a second insulating layer between the first insulating layer and the lower surface of the second portion, and between the lower surface of the second portion and the second electrode.
7. The semiconductor device of claim 1 , wherein at the location where the second portion starts extending from the first portion, the lower surface of the second portion is spaced from the first insulating layer.
8. The semiconductor device according to claim 1 , wherein at the location where the second portion starts extending from the first portion, the lower surface of the second portion is in contact with the first insulating layer.
9. The semiconductor device according to claim 1 , wherein the lower surface of the second portion is curved in an outwardly convex shape from the third portion to an end of the second portion.
10. A semiconductor device, comprising:
a first conductivity type first semiconductor layer;
a first electrode on the first semiconductor layer;
a second electrode on the first semiconductor layer and spaced from the first electrode;
a first insulating layer on the first semiconductor layer between the first electrode and the second electrode; and
a third electrode between the first electrode and the second electrode, the third electrode comprising a first portion including a part directly contacting the first insulating layer and a second portion extending from the first portion toward the second electrode, the second portion spaced from the first insulating layer and having a curved surface disposed facing the first insulating layer, wherein
the first portion includes only portions of the third electrode that are directly above the part directly contacting the first insulating layer,
the distance between the first insulating layer and the curved surface of the second portion varies along the direction from the first portion towards the second electrode.
11. The semiconductor device according to claim 10 , wherein the distance between the curved surface and the first insulating layer continuously increases along a direction from the first portion towards the second electrode.
12. The semiconductor device according to claim 10 , wherein the curved surface further has an inwardly convex portion.
13. The semiconductor device according to claim 10 , wherein the curved surface further has an inwardly concave portion.
14. The semiconductor device according to claim 10 , wherein the thickness of the second portion is uniform from a first end adjacent to the first portion to a second end distal of the first end of the second portion.
15. The semiconductor device according to claim 10 , wherein the entire curved surface of the second portion is outwardly convex.