Dry-etching method
According to the present invention, a dry-etching method for performing plasma etching in a vertical profile while maintaining selectivity relative to a mask, includes: a first process of etching a film to be etched with use of reactive gas to cause an etching profile of the film to be etched to be formed in a footing profile; and a second process of, after the first process, causing the footing profile to be formed in a vertical profile by means of sputtering etching.
1. A dry-etching method for performing plasma etching of a film, deposited on a sample mounted on a sample stage, to a prescribed depth using a mask, comprising:
a first process of etching the film using a reactive gas to cause an etching profile of the film to a depth to be formed in a footing profile at a pressure while supplying a first radio frequency power to the sample stage, the footing profile having corner portions formed along a sidewall portion of the film; and
a second process of, after the first process, sputtering etching the film, that has been subjected to the first process, using only an Ar gas while supplying a second radio frequency power, higher than the first radio frequency power, to the sample stage to remove the corner portions of the footing profile to form a vertical profile by selectively removing the corner portions relative to the mask by using only the Ar gas without any reactive gas at the higher second radio frequency power,
wherein the first process and the second process are repeated until the prescribed depth is reached, where the first process determines a new depth until the prescribed depth is reached and the second process changes the footing profile into the vertical profile after each time the new depth is determined by the first process.
2. The dry-etching method according to claim 1 , wherein the film to be etched is a film containing Si.
3. The dry-etching method according to claim 1 , wherein a structure of the film to be etched is a high-aspect-ratio structure.
4. A dry-etching method for performing plasma etching of a film, deposited on a sample mounted on a sample stage, to a prescribed depth using a mask having a predetermined inter-pattern space width, comprising:
a first process of etching the film using a reactive gas to cause an etching profile of the film to be formed in a footing profile while supplying a first radio frequency power to the sample stage; and
a second process of, after the first process, sputter-etching the film that has been subjected to the first process using only an Ar gas while supplying a second radio frequency power, higher than the first radio frequency power, to the sample stage to remove the corner portions of the footing profile to form a vertical profile by selectively removing the corner portions relative to the mask by using only the Ar gas without any reactive gas at the higher second radio frequency power,
wherein the first process and the second process are repeated until the prescribed depth is reached, where the first process determines a new depth until the prescribed depth is reached and the second process changes the footing profile into the vertical profile after each time the new depth is determined by the first process, and
wherein a time of the first process is less than or equal to a value derived by dividing a half value of the inter-pattern space width of the mask by a predetermined etching speed of the reactive gas in the first process.
5. The dry-etching method according to claim 4 , wherein the film to be etched is a film containing Si.
6. The dry-etching method according to claim 4 , wherein a structure of the film to be etched is a high-aspect-ratio structure.
7. The dry-etching method according to claim 4 , wherein the second radio-frequency power supplied to the sample stage in the second process is higher than the first radio-frequency power supplied to the sample stage in the first process.