Semiconductor device

1. A semiconductor device comprising:

a semiconductor substrate which a semiconductor element is formed;

a first electrode layer stacked on the semiconductor substrate and electrically connected to the semiconductor element;

a first insulation film stacked on a part of an upper face of the first electrode layer; and

a second electrode layer stacked over both the first electrode layer and the first insulation film, the second electrode layer including a material having a mechanical strength that is higher than a mechanical strength of a material included in the first electrode layer; wherein

a groove portion is provided from the upper face in a direction toward a lower face of the first electrode layer,

a protrusion portion protruding into the groove portion is provided on a lower face of the second electrode layer, and

a lower end of the protrusion portion is positioned below a center position in a thickness direction of the first electrode layer, and the lower end of the protrusion portion is positioned above or equal to the lower face of the first electrode layer.

2. The semiconductor device according to claim 1 , wherein

the groove portion extends in a looped shape in the upper face of the first electrode layer,

an inner part of the first electrode layer is not in contact with the first insulation film and is positioned on an element region of the semiconductor substrate, the inner part being positioned on an inner side of the groove portion extending in the looped shape.

3. The semiconductor device according to claim 1 , wherein

the groove portion extends to the lower face of the first electrode layer.

4. The semiconductor device according to claim 1 , wherein

a width of the groove portion increases as closer to the upper face of the first electrode layer.

5. The semiconductor device according to claim 1 , wherein

a group of through holes extending to the lower face of the first electrode layer is provided in the upper face of the first electrode layer, and

a group of second protrusion portions protruding into the group of through holes is provided in the lower face of the second electrode layer.

6. The semiconductor device according to claim 1 , wherein

a linear expansion coefficient of the material included in the second electrode layer is closer to a linear expansion coefficient of a material included in the semiconductor substrate than a linear expansion coefficient of the material included in the first electrode layer.

7. The semiconductor device according to claim 1 , further comprising

a second insulating film provided between the semiconductor substrate and the first electrode layer, the second insulating film including a contact hole extending from an upper face to a lower face; and

an embedded electrode provided in the contact hole.

8. A semiconductor device comprising:

a semiconductor substrate which a semiconductor element is formed;

a first electrode layer stacked on the semiconductor substrate and electrically connected to the semiconductor element;

a first insulation film stacked on a part of an upper face of the first electrode layer; and

a second electrode layer stacked over both the first electrode layer and the first insulation film, the second electrode layer including a material having a mechanical strength that is higher than a mechanical strength of a material included in the first electrode layer;

wherein

a groove portion is provided from the upper face in a direction toward a lower face of the first electrode layer,

a protrusion portion protruding into the groove portion is provided on a lower face of the second electrode layer, and

a lower end of the protrusion portion is positioned below a center position in a thickness direction of the first electrode layer,

the groove portion extends in a looped shape in the upper face of the first electrode layer, and

an inner part of the first electrode layer is not in contact with the first insulation film and is positioned on an element region of the semiconductor substrate, the inner part being positioned on an inner side of the groove portion extending in the looped shape.

9. A semiconductor device comprising:

a semiconductor substrate which a semiconductor element is formed;

a first electrode layer stacked on the semiconductor substrate and electrically connected to the semiconductor element;

a first insulation film stacked on a part of an upper face of the first electrode layer;

a second insulating film provided between the semiconductor substrate and the first electrode layer, the second insulating film including a contact hole extending from an upper face to a lower face;

an embedded electrode provided in the contact hole; and

a second electrode layer stacked over both the first electrode layer and the first insulation film, the second electrode layer including a material having a mechanical strength that is higher than a mechanical strength of a material included in the first electrode layer;

wherein

a groove portion is provided from the upper face in a direction toward a lower face of the first electrode layer,

a protrusion portion protruding into the groove portion is provided on a lower face of the second electrode layer, and

a lower end of the protrusion portion is positioned below a center position in a thickness direction of the first electrode layer.