Aluminum nitride piezoelectric thin film, piezoelectric material, piezoelectric component, and method for manufacturing aluminum nitride piezoelectric thin film
A germanium-containing aluminum nitride piezoelectric film and a method for manufacturing an aluminum nitride piezoelectric film in which a germanium-containing aluminum nitride piezoelectric film is grown on a substrate by sputtering.
1. A piezoelectric film containing aluminum nitride and germanium, wherein a polarization direction of the piezoelectric film is a nitrogen polarity, and the polarization direction is a direction opposite to a film growing direction.
2. The piezoelectric film according to claim 1 , wherein a concentration of the germanium is in a range of 3 to 28 at % when a total concentration of the germanium and aluminum is 100 at %.
3. The piezoelectric film according to claim 2 , wherein the concentration of the germanium is in a range of 4 to 21 at %.
4. The piezoelectric film according to claim 3 , wherein the concentration of the germanium is in a range of 5 to 16 at %.
5. A piezoelectric component comprising:
a substrate; and
a piezoelectric film according to claim 1 on the substrate.
6. The piezoelectric component according to claim 5 , wherein the substrate contains Si.
7. The piezoelectric component according to claim 5 , further comprising an electrode on the piezoelectric film.