SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device according to embodiments includes a p-type SiC region, a gate insulating film disposed on the p-type SiC region, and a gate electrode disposed on the gate insulating film and including a p-type impurity and 3 C-SiC.
1 . A semiconductor device, comprising:
a p-type SiC region;
a gate electrode including a p-type impurity and 3C-SiC; and
a gate insulating film disposed between the p-type SiC region and the gate electrode.
2 . The device according to claim 1 , wherein
the gate electrode includes the p-type impurity and the 3C-SiC at least in a region contacting the gate insulating film.
3 . The device according to claim 1 , wherein
the p-type SiC region is 4H-SiC.
4 . The device according to claim 1 , wherein
the p-type impurity is aluminum (Al), gallium (Ga), or indium (In).
5 . The device according to claim 1 , wherein
a concentration of the p-type impurity in the gate electrode is equal to or more than 1×10 19 cm −3 .
6 . The device according to claim 1 , wherein
a concentration of a p-type impurity in the p-type SiC region is equal to or less than 1×10 10 cm −3 .
7 . The device according to claim 1 , wherein
the volume of the 3C-SiC in the gate electrode is larger than the volume of 4H-SiC in the gate electrode.
8 . The device according to claim 1 , wherein
the gate insulating film is a silicon oxide film.
9 . A method for manufacturing a semiconductor device, comprising:
forming a gate insulating film on a p-type SiC region; and
forming, on the gate insulating film, a gate electrode including a p-type impurity and 3C-SiC at a temperature of equal to or less than 1,200° C.
10 . The method according to claim 9 , wherein
the forming of the gate electrode includes depositing a 3C-SiC layer including the p-type impurity by chemical vapor deposition (CVD) at a temperature of equal to or less than 1,200° C.
11 . The method according to claim 9 , wherein
the forming of the gate electrode includes depositing a silicon film including the p-type impurity and performing heat treatment to carbonize the silicon film at a temperature of equal to or less than 1,200° C.
12 . The method according to claim 11 , wherein
the heat treatment is performed in an atmosphere including ethane (C 2 H 6 ), ethylene (C 2 H 6 ), or acetylene (C 2 H 2 ).
13 . The method according to claim 9 , wherein
the p-type impurity is aluminum (Al), gallium (Ga), or indium (In).