Array substrate and method for making same

1. An array substrate comprising:

a substrate;

a first insulator layer formed on the substrate;

a second insulator layer formed on the first insulator layer;

a third insulator layer formed on the second insulator layer;

a first TFT formed on the substrate, the first TFT comprising a first channel layer on the substrate, a first gate electrode on the first insulator layer, a first source electrode, and a first drain electrode, the first source electrode and the first drain electrode on the third insulator layer;

a storage capacitance layer formed on the substrate; and

a second TFT formed on the substrate, the second TFT comprising a second gate electrode on the first insulator layer, a second channel layer on the second insulator layer, and a second source electrode and a second drain electrode, the second source electrode and the second drain electrode on the third insulator layer;

the first insulator layer covering the first channel layer and the storage capacitance layer; the second insulator layer covering the first gate electrode and the second gate electrode;

wherein the first channel layer and the storage capacitance layer are made of a semiconducting material containing polycrystalline silicon; the second channel layer is made of a semiconducting material containing metal oxide; the third insulator layer covers the second channel layer; a second source hole and a second drain hole are defined to extend through the third insulator layer and overlap the second channel layer; a portion of the third insulator layer between the second drain hole and the second source hole defines a protection portion;

wherein a first source hole and a first drain hole are defined to extend through the third insulator layer, the second insulator layer, and the first insulator layer, and overlap the first channel layer;

the first source electrode extends into the first source hole to electrically couple to the first channel layer;

the first drain electrode extends into the first drain hole to electrically couple to the first channel layer;

a storage capacitance hole is defined to extend through the third insulator layer, the second insulator layer, and the first insulator layer, and overlap the storage capacitance layer;

the second source electrode extends into the second source hole to electrically couple to the second channel layer;

the second drain electrode extends into the second drain hole to electrically couple to the second channel layer; and

the second drain electrode also extends into the storage capacitance hole to electrically couple to the storage capacitance layer.

2. The array substrate of claim 1 , wherein:

the first channel layer is at least partially doped with P-type ions and comprises a non-doped portion not doped with P-type ions, two lightly P-type ion doped portions, and two heavily P-type ion doped portions;

the two lightly P-type ion doped portions are located at opposite sides of the non-doped portion;

each heavily P-type ion doped portion is located at a side of one lightly P-type ion doped portion away from the non-doped portion; and

the heavily P-type ion doped portion has a P-type ion concentration greater than that of the lightly P-type ion doped portion.

3. The array substrate of claim 1 , wherein the first channel layer is doped with N-type ions and comprises an ultra-lightly-doped portion, two lightly-doped portions, and two heavily-doped portions; the two lightly-doped portions are located at opposite sides of the ultra-lightly-doped portion; each heavily-doped portion is located at a side of one lightly-doped portion away from the ultra-lightly-doped portion; the heavily-doped portion has a N-type ion concentration greater than that of the lightly-doped portion; and the lightly-doped portion has a N-type ion concentration greater than that of the ultra-lightly-doped portion.

4. The array substrate of claim 1 , wherein the array substrate further comprises a fourth insulator layer formed on the third insulator layer, a fifth insulator layer formed on the fourth insulator layer, a first electrode layer formed on the fourth insulator layer, and a second electrode layer formed on the fifth insulator layer; the first electrode layer is covered by the fifth insulator layer; the fourth insulator layer defines a first connecting hole corresponding to the second drain electrode and passing through the fourth insulator layer; the fifth insulator layer defines a second connecting hole corresponding to the first connecting hole and passing through the fifth insulator layer and the fourth insulator layer; the second electrode layer extends into the second connecting hole to electrically couple to the second drain electrode.

5. The array substrate of claim 1 , wherein the array substrate further comprises a third TFT formed on the substrate, the third TFT comprises a third channel layer on the substrate, a third gate electrode on the first insulator layer, and a third source electrode and a third drain electrode on the third insulator layer and electrically coupled to the third channel layer; the third channel layer is made of a semiconducting material containing polycrystalline silicon doped with P-type ions and comprises a ultra-lightly-doped portion, two lightly-doped portions, and two heavily-doped portions; the two lightly-doped portions are located at opposite sides of the ultra-lightly-doped portion; each heavily-doped portion is located at a side of one lightly-doped portion away from the ultra lightly-doped portion; the heavily-doped portion has a P-type ion concentration greater than that of the lightly-doped portion;

and the lightly-doped portion has a P-type ion concentration greater than that of the ultra-lightly-doped portion.

6. An array substrate comprising:

a substrate, the substrate defining a display area and a peripheral area around the display area;

a first insulator layer, the first insulator layer formed on the substrate and extending from the display area to the peripheral area;

a second insulator layer, the second insulator layer formed on the first insulator layer and extending from the display area to the peripheral area;

a third insulator layer, the third insulator layer formed on the second insulator layer and extending from the display area to the peripheral area;

a first TFT, the first TFT formed on the substrate and positioned in the peripheral area, the first TFT comprising a first channel layer on the substrate, a first gate electrode on the first insulator layer, a first source electrode, and a first drain electrode, the first source electrode and the first drain electrode on the third insulator layer;

a storage capacitance layer formed on the substrate;

a second TFT, the second TFT formed on the substrate and positioned in the display area, the second TFT comprising a second gate electrode on the first insulator layer, a second channel layer on the second insulator layer, a second source electrode, and a second drain electrode, the second source electrode and the second drain electrode on the third insulator layer; and

a third TFT, the third TFT formed on the substrate and positioned in the display area, the third TFT comprising a third gate electrode on the first insulator layer, a third channel layer on the second insulator layer, a third source electrode, and a third drain electrode, the third source electrode and the third drain electrode on the third insulator layer and electrically coupled to the third channel layer;

the first insulator layer covering the first channel layer and the storage capacitance layer; the second insulator layer covering the first gate electrode, the second gate electrode, and the third electrode;

wherein the first channel layer and the storage capacitance layer are made of a semiconducting material containing polycrystalline silicon; the second channel layer and the third channel layer are made of a semiconducting material containing metal oxide; the third insulator layer covers the second channel layer; a second source hole and a second drain hole are defined to overlap the second channel layer and extend through the third insulator layer; a third source hole and a third drain hole are defined to extend through the third insulator layer and overlap the third channel layer; a portion of the third insulator layer between the second drain hole and the second source hole defines a first protection portion; a portion of the third insulator layer between the third drain hole and the third source hole defines a second protection portion;

wherein a first source hole and a first drain hole are defined to extend through the third insulator layer, the second insulator layer, and the first insulator layer, and overlap the first channel layer;

the first source electrode extends into the first source hole to electrically couple to the first channel layer;

the first drain electrode extends into the first drain hole to electrically couple to the first channel layer;

a storage capacitance hole is defined to extend through the third insulator layer, the second insulator layer, and the first insulator layer, and overlap the storage capacitance layer;

the second source electrode extends into the second source hole to electrically couple to the second channel layer;

the second drain electrode extends into the second drain hole to electrically couple to the second channel layer; and

the second drain electrode also extends into the storage capacitance hole to electrically couple to the storage capacitance layer.

7. The array substrate of claim 6 , wherein the first channel layer is at least partially doped with P-type ions and comprises a non-doped portion doped not doped with P-type ion, two lightly P-type ion doped portions, and two heavily P-type ion doped portions;

the two lightly P-type ion doped portions are located at opposite sides of the non-doped portion;

each heavily P-type ion doped portion is located at a side of one lightly P-type ion doped portion away from the non-doped portion; and

the heavily P-type ion doped portion has a P-type ion concentration greater than that of the lightly P-type ion doped portion.

8. The array substrate of claim 6 , wherein the first channel layer is doped with N-type ions and comprises an ultra-lightly-doped portion, two lightly-doped portions, and two heavily-doped portions; the two lightly-doped portions are located at opposite sides of the ultra-lightly-doped portion; each heavily-doped portion is located at a side of one lightly-doped portion away from the ultra-lightly-doped portion; the heavily-doped portion has a N-type ion concentration greater than that of the lightly-doped portion; and the lightly-doped portion has a N-type ion concentration greater than that of the ultra-lightly-doped portion.

9. The array substrate of claim 6 , wherein the array substrate further comprises a fourth insulator layer on the third insulator layer, an anode layer on the fourth insulator layer, and a pixel electrode layer on the fourth insulator layer; the pixel electrode layer partially covers the anode layer; the fourth insulator layer defines an anode hole corresponding to the second drain electrode and passing through the fourth insulator layer; the anode layer extends into the anode hole to electrically couple to the second drain electrode.

10. The array substrate of claim 6 , wherein the array substrate further comprises a fourth TFT formed on the substrate and positioned in the peripheral area, the fourth TFT comprising a fourth channel layer on the substrate, a fourth gate electrode on the first insulator layer, and a fourth source electrode and a fourth drain electrode on the third insulator layer and electrically coupled to the fourth channel layer; the fourth channel layer is made of a semiconducting material containing polycrystalline silicon doped with P-type ions and comprises a ultra-lightly-doped portion, two lightly-doped portions, and two heavily-doped portions; the two lightly-doped portions are located at opposite sides of the ultra-lightly-doped portion; each heavily-doped portion is located at a side of one lightly-doped portion away from the ultra lightly-doped portion; the heavily-doped portion has a P-type ion concentration greater than that of the lightly-doped portion; and the lightly-doped portion has a P-type ion concentration greater than that of the ultra-lightly-doped portion.