IP Library › Granted Patent US 10,711,183
Granted Patent B2
US 10,711,183 · App. 15/256,521 · Granted Jul 14, 2020

Synthesis of nanocrystals

Inventors: Jose M. Cordero (Penuelas, PR); Yue Chen (Cambridge, MA); Moungi G. Bawendi (Cambridge, MA)
Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
C09K11/025B82Y40/00C09K11/02C09K11/663C09K11/883B82Y20/00B82Y30/00Y10S977/774Y10S977/824Y10S977/892Y10S977/896Y10S977/95
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Quick Facts
Patent No.
US 10,711,183
App. No.
15/256,521
Granted
Jul 14, 2020
Kind
B2
Abstract

A nanocrystal composition can include a nanocrystal and an outer layer including a ligand bound to the nanocrystal, wherein the ligand includes a norbornene group and a carboxyl group.

Claims (14)

1. A nanocrystal composition comprising:

a nanocrystal, and

an outer layer including a ligand bound to the nanocrystal, wherein

the ligand includes a norbornene group and a carboxyl group.

2. The nanocrystal composition of claim 1 , wherein the nanocrystal is a semiconductor nanocrystal including a core of a first semiconductor material.

3. The nanocrystal composition of claim 2 , wherein the first semiconductor material is a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group compound, a Group II-IV-VI compound, or a Group II-IV-V compound.

4. The nanocrystal composition of claim 2 , wherein the first semiconductor material is ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, GaSe, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe, PbTe, or mixtures thereof.

5. The nanocrystal composition of claim 2 , wherein the semiconductor nanocrystal includes a second semiconductor material overcoated on the first semiconductor material.

6. The nanocrystal composition of claim 5 , wherein the first semiconductor material has a first band gap, and the second semiconductor material has a second band gap that is larger than the first band gap.

7. The nanocrystal composition of claim 5 , wherein the second semiconductor material is a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group compound, a Group II-IV-VI compound, or a Group II-IV-V compound.

8. The nanocrystal composition of claim 5 , wherein the second semiconductor material is ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, MgO, MgS, MgSe, MgTe, HgO, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, TlSb, PbS, PbSe, PbTe, or mixtures thereof.

9. The nanocrystal composition of claim 1 , wherein the ligand includes a 5-norbornene-2-nonanoate.

10. The nanocrystal composition of claim 1 , wherein the nanocrystal includes a perovskite.

11. The nanocrystal composition of claim 1 , wherein the nanocrystal includes a CsPbCl 3 , a CsPbBr 3 , or a CsPbI 3 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 18, 2018
From: CORDERO, JOSE M.; CHEN, YUE; BAWENDI, MOUNGI G.
To: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Reel/Frame 045569/0331 →
CONFIRMATORY LICENSE Recorded Oct 26, 2017
From: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
To: NATIONAL INSTITUTES OF HEALTH (NIH), U.S. DEPT. OF HEALTH AND HUMAN SERVICES (DHHS), U.S. GOVERNMENT
Reel/Frame 044294/0400 →
Continuity (2)
Provisional Application 62214743 · Sep 4, 2015
Related Publication 20170198217A1 · Jul 13, 2017