Fill factor enhancement for image sensor
An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a plurality of isolation structures disposed between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures electrically isolate individual photodiodes in the plurality of photodiodes. A plurality of transistors are disposed proximate to the plurality of photodiodes and include a reset transistor, an amplifier transistor, and a row select transistor. An active region and a gate electrode of at least one transistor in the plurality of transistors are vertically aligned with an isolation structure in the plurality of isolation structures.
1. An image sensor, comprising:
a plurality of photodiodes disposed in a semiconductor material;
a plurality of isolation structures disposed between individual photodiodes in the plurality of photodiodes and positioned to prevent charge transfer between the individual photodiodes in the plurality of photodiodes; and
a plurality of transistors disposed proximate to the plurality of photodiodes including a reset transistor, an amplifier transistor, and a row select transistor, wherein an entirety of at least one transistor is vertically aligned with an isolation structure in the plurality of isolation structures, and wherein the at least one transistor is one of the reset transistor, the amplifier transistor, or the row select transistor, wherein the at least one transistor is a fin-field effect transistor (“Fin-FET”), and wherein there is only one Fin-FET disposed on each of the individual isolation structures between the individual photodiodes.
2. The image sensor of claim 1 , wherein lateral bounds of the active region and the gate electrode of the at least one transistor are smaller than lateral bounds of the isolation structure.
3. The image sensor of claim 2 , further comprising a transfer gate laterally disposed between two isolation structures in the plurality of isolation structures and laterally coextensive with at least part of an individual photodiode in the plurality of photodiodes.
4. The image sensor of claim 3 , wherein the gate electrode and transfer gate include polysilicon and the active region include single crystal silicon.
5. The image sensor of claim 3 , wherein the transfer gate is electrically coupled to transfer charge from the individual photodiode to a floating diffusion, and wherein the floating diffusion is electrically coupled to a gate electrode of the amplifier transistor and a first terminal of the reset transistor.
6. The image sensor of claim 1 , wherein the plurality of isolation structures extend into the semiconductor material and include at least one of a metal, a semiconductor, or an oxide material.
7. An imaging system, comprising:
a plurality of photodiodes disposed in a semiconductor material, wherein adjacent photodiodes are laterally separated by, and disposed between, individual isolation structures in a plurality of isolation structures disposed in the semiconductor material and positioned to prevent charge transfer between the adjacent photodiodes; and
pixel circuitry disposed proximate to the plurality of photodiodes including a fin-field effect transistor (“Fin-FET”) that is one of a reset transistor, an amplifier transistor, or a row select transistor, wherein an entirety of the Fin-FET is vertically aligned with an individual isolation structure, wherein there is only one Fin-FET disposed on each of the individual isolation structures between the individual photodiodes.
8. The imaging system of claim 7 , wherein the pixel circuitry further includes a transfer gate, laterally disposed between two isolation structures in the plurality of isolation structures, and wherein the transfer gate is laterally coextensive with at least part of an individual photodiode in the plurality of photodiodes to transfer image charge out of the individual photodiode.
9. The imaging system of claim 7 , wherein lateral bounds of the Fin-FET are smaller than lateral bounds of the individual isolation structure.
10. The imaging system of claim 7 , wherein the individual isolation structures extend into the semiconductor material a depth that is greater than a width of the individual isolation structures.
11. The imaging system of claim 10 , wherein the plurality of photodiodes extend into the semiconductor material a second depth and wherein the depth is greater than the second depth.
12. The imaging system of claim 7 , wherein the active region includes single crystal silicon and the gate electrode includes polycrystalline silicon.