Circuit redistribution structure unit and method for manufacturing circuit redistribution structure
A method for manufacturing a circuit redistribution structure includes the following steps. A first dielectric is formed on a carrier. Conductive blind vias are formed in the first dielectric. A first circuit redistribution layer is formed on the first dielectric. A second dielectric is formed on the first dielectric. First and second holes are formed on the second dielectric. A trench is formed in the second dielectric to divide the second dielectric into first and second portions. A first portion of the first circuit redistribution layer and the first hole are disposed in the first portion of the second dielectric, and a second portion of the first circuit redistribution layer and the second hole are disposed in the second portion of the second dielectric. Conductive blind vias are formed in the first and second holes, and a second circuit redistribution layer is formed on the second dielectric.
1. A circuit redistribution structure unit, comprising:
a first dielectric layer;
a plurality of first conductive vias disposed in the first dielectric layer;
a first circuit redistribution layer disposed on the first dielectric layer and electrically connected to the first conductive vias;
a second dielectric layer disposed on the first dielectric layer and the first circuit redistribution layer;
a plurality of second conductive vias disposed in the second dielectric layer and electrically connected to the first circuit redistribution layer;
a second circuit redistribution layer disposed on the second dielectric layer and electrically connected to the second conductive vias;
an encapsulation layer disposed on the second dielectric layer and the second circuit distribution layer, wherein the second dielectric layer has a first surface, a second surface opposite to the first surface, and a side surface connecting the first surface and the second surface, the second circuit redistribution layer is disposed on the first surface, and the encapsulation layer covers the first surface and the side surface;
a plurality of third conductive vias disposed in the encapsulation layer and electrically connected to the second circuit redistribution layer;
a plurality of conductive bumps disposed on the encapsulation layer and electrically connected to the third conductive vias; and
a plurality of micro bumps disposed on one side of the first dielectric layer opposite to the second dielectric layer and respectively electrically connected to the first conductive vias.
2. The circuit redistribution structure unit of claim 1 , wherein the encapsulation layer is further disposed on the first dielectric layer exposed by the second dielectric layer, and a thickness of the encapsulation layer disposed on the first dielectric layer is greater than a thickness of the encapsulation layer disposed on the second dielectric layer.
3. The circuit redistribution structure unit of claim 1 , wherein the first dielectric layer and the second dielectric layer are made of photosensitive dielectric material.