IP Library › Granted Patent US 9,853,207
Granted Patent B2
US 9,853,207 · App. 15/258,096 · Granted Dec 26, 2017

Magnetoresistance effect element

Inventors: Takuya Seino (Kawasaki, JP); Kazumasa Nishimura (Kawasaki, JP); Toshikazu Irisawa (Kawasaki, JP); Saki Shibuichi (Kawasaki, JP)
Assignee: CANON ANELVA CORPORATION
H01L43/10G01R33/098G11C11/161H01F10/3236H01F10/3272H01L43/08H01F10/3286H01L43/12
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Quick Facts
Patent No.
US 9,853,207
App. No.
15/258,096
Granted
Dec 26, 2017
Kind
B2
Abstract

A magnetoresistance effect element of the present invention includes: a barrier layer; a reference layer formed on one surface of the barrier layer; a free layer formed on the other surface of the barrier layer; and a pinned layer placed on the opposite side of the reference layer from the barrier layer. The pinned layer includes a structure obtained by stacking Ni, Co, Pt, Co, Ru, Co, Pt, Co, and Ni layers in this order.

Claims (6)

1. A magnetoresistance effect element comprising:

a barrier layer;

a reference layer formed on one surface of the barrier layer;

a free layer formed on another surface of the barrier layer; and

a pin layer placed on an opposite side of the reference layer from the barrier layer, wherein

the pin layer includes a structure obtained by stacking Ni, Co, Pt, Co, Ru, Co, Pt, Co, and Ni layers in this order.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 18, 2016
From: SEINO, TAKUYA; NISHIMURA, KAZUMASA; IRISAWA, TOSHIKAZU; SHIBUICHI, SAKI
To: CANON ANELVA CORPORATION
Reel/Frame 040045/0930 →
Priority Claims (1)
JP 2015-104341 · May 22, 2015 · national
Continuity (2)
Continuation PCTJP2016000158 · Jan 14, 2016
Related Publication 20160380187A1 · Dec 29, 2016