IP Library › Granted Patent US 10,896,923
Granted Patent B2
US 10,896,923 · App. 15/258,114 · Granted Jan 19, 2021

Method of operating an imaging device with global shutter system

Inventors: Takuro Ohmaru (Fukuoka, JP); Naoto Kusumoto (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L27/14616H01L27/14603H01L27/14627H01L27/14645H01L31/0272H04N5/2253H04N5/32H04N5/3532H04N5/378H04N5/37452H04N5/37457
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Quick Facts
Patent No.
US 10,896,923
App. No.
15/258,114
Granted
Jan 19, 2021
Kind
B2
Abstract

An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels. A node AN (a first charge retention portion), a node FD (a second charge retention portion), and a node FDX (the charge detection portion) are provided. Imaging data obtained in the node AN is transferred to the node FD, and the imaging data is sequentially transferred from the node FD to the node FDX to be read.

Claims (8)

1. A method for operating an imaging device, comprising the steps in the sequence set forth:

a first step of accumulating charge in a first charge accumulation portion included in a first pixel by a first photoelectric conversion element and accumulating charge in a first charge accumulation portion included in a second pixel by a second photoelectric conversion element at the same timing;

a second step of transferring charge of the first charge accumulation portion included in the first pixel to a second charge accumulation portion included in the first pixel and transferring charge of the first charge accumulation portion included in the second pixel to a second charge accumulation portion included in the second pixel at the same timing;

a third step of transferring charge of the second charge accumulation portion included in the first pixel to a charge detection portion and reading a signal corresponding to a potential of the charge detection portion;

a fourth step of resetting the potential of the charge detection portion;

a fifth step of transferring charge of the second charge accumulation portion included in the second pixel to the charge detection portion and reading the signal corresponding to the potential of the charge detection portion; and

a sixth step of resetting the potential of the charge detection portion.

2. The method for operating the imaging device according to claim 1 , wherein the first step and the second step are performed in an n-th frame, where n is a natural number of 1 or more, and the third step, the fourth step, the fifth step, and the sixth step are performed in an (n+1)th frame.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 19, 2020
From: OHMARU, TAKURO; KUSUMOTO, NAOTO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 051853/0153 →
Priority Claims (1)
JP 2015-184901 · Sep 18, 2015 · national
Continuity (1)
Related Publication 20170084649A1 · Mar 23, 2017
Cited By (2)
US 12,635,280 US 12,740,163