Semiconductor device and method of forming curved image sensor region robust against buckling
View Patent ↗A semiconductor wafer has a plurality of non-rectangular semiconductor die with an image sensor region. The non-rectangular semiconductor die has a circular, elliptical, and shape with non-linear side edges form factor. The semiconductor wafer is singulated with plasma etching to separate the non-rectangular semiconductor die. A curved surface is formed in the image sensor region of the non-rectangular semiconductor die. The non-rectangular form factor effectively removes a portion of the base substrate material in a peripheral region of the semiconductor die to reduce stress concentration areas and neutralize buckling in the curved surface of the image sensor region. A plurality of openings or perforations can be formed in a peripheral region of a rectangular or non-rectangular semiconductor die to reduce stress concentration areas and neutralize buckling. A second semiconductor die can be formed in an area of the semiconductor wafer between the non-rectangular semiconductor die.
1. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including a base substrate material;
singulating the semiconductor wafer into a plurality of non-rectangular semiconductor dies by removing stress concentration areas in the base substrate material along each side edge of the non-rectangular semiconductor dies leaving symmetrical, non-linear side edges extending between each corner of the non-rectangular semiconductor dies;
forming a plurality of openings or perforations along each side edge of the non-rectangular semiconductor dies; and
forming a curved surface in the non-rectangular semiconductor dies including along each non-linear side edge without the stress concentration areas.
2. The method of claim 1 , further including forming an image sensor region in the non-rectangular semiconductor dies.
3. The method of claim 1 , further including forming a second semiconductor die in an area of the semiconductor wafer between the non-rectangular semiconductor dies.
4. The method of claim 1 , further including singulating the semiconductor wafer with a plasma process.
5. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including a base substrate material and a plurality of semiconductor dies formed in the base substrate material;
removing a portion of the base substrate material in stress concentration areas of the base substrate material along each side edge leaving non-linear side edges extending between corners of the semiconductor dies; and
forming a curved surface in the semiconductor dies including along each non-linear side edge.
6. The method of claim 5 , wherein removing the portion of the base substrate material includes forming the semiconductor dies with a non-rectangular form factor.
7. The method of claim 5 , wherein removing the portion of the base substrate material includes:
forming the semiconductor dies with a rectangular form factor; and
forming a plurality of openings or perforations in the semiconductor dies.
8. The method of claim 5 , wherein removing the portion of the base substrate material includes forming a plurality of openings or perforations along the side edges of the semiconductor dies.
9. The method of claim 5 , further including forming an image sensor region in the semiconductor dies.
10. The method of claim 5 , further including singulating the semiconductor wafer to separate the semiconductor dies.
11. The method of claim 10 , further including singulating the semiconductor wafer with a plasma process.
12. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including a base substrate material and a plurality of semiconductor dies formed in the base substrate material;
singulating the semiconductor wafer to provide the semiconductor dies devoid of a portion of the base substrate material in stress concentration areas along each side edge of the semiconductor dies; and
forming a curved surface in the semiconductor dies including along each side edge.
13. The method of claim 12 , further including forming the semiconductor dies with a non-rectangular form factor.
14. The method of claim 13 , wherein the non-rectangular form factor includes non-linear edges.
15. The method of claim 12 , further including forming an image sensor region in the semiconductor dies.
16. The method of claim 12 , further including forming a plurality of openings or perforations along the side edges of the semiconductor dies.