Electrically and Magnetically Enhanced Ionized Physical Vapor Deposition Unbalanced Sputtering Source
An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms.
1 . A method of depositing a layer on a substrate, the method comprising:
applying a magnetic field to a cathode target to generate an unbalanced magnetic field and a magnetron configuration on the cathode target;
electrically coupling an additional electrode to a ground electrical potential using an electrical circuit comprising an inductor;
electrically coupling the additional electrode to a radio frequency (RF) power supply;
generating magnetic coupling between the cathode target and the anode;
providing a feed gas; and
applying power to the cathode target, the RF power supply providing a power selected to increase ionization of sputtered target material atoms associated with the cathode target during sputtering.
2 . The method, as defined by claim 1 , further comprising coupling a DC power supply to the cathode, the DC power supply providing output power in a range of 1 to 100 kW.
3 . The method, as defined by claim 1 , wherein the feed gas comprises a noble gas, the noble gas comprising at least one of argon, xenon, neon, and krypton.
4 . The method, as defined by claim 1 , wherein the feed gas comprises a mixture of a noble gas and a reactive gas.
5 . The method, as defined by claim 1 , further comprising coupling the RF power supply to the cathode target, the RF power supply providing output power in a range of 1 to 20 kW.
6 . The method, as defined by claim 1 , further comprising coupling a substrate bias voltage to a substrate holder, the substrate bias voltage comprising a range of −10 V to −200 V.
7 . The method, as defined by claim 1 , wherein the feed gas comprises a noble gas, the noble gas comprising at least one of argon, xenon, neon, and krypton.
8 . The method, as defined by claim 1 , wherein the feed gas comprises a mixture of a noble gas and a reactive gas.
9 . The method, as defined by claim 1 , wherein the feed gas comprises a mixture of a noble gas and a gas that comprises atoms of the cathode target material.
10 . The method, as defined by claim 1 , further comprising coupling a pulsed DC power supply to the cathode target, the pulsed DC power supply providing an output peak power during a pulse in a range of 10 to 1000 kW.
11 . An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) unbalanced magnetron sputtering apparatus that deposits a layer on a substrate, the apparatus comprising:
a vacuum chamber;
a cathode magnet target assembly that generates an unbalanced magnetic field and provides a magnetron configuration on a target surface;
an additional electrode coupled to a ground electrical potential using an electrical circuit comprising an inductor, the anode being coupled to a radio frequency (RF) power supply;
an additional electrode magnet assembly that generates magnetic coupling between a cathode target and the additional electrode;
a feed gas; and
a power supply coupled to the cathode magnet target assembly, the power supply generating a magnetron discharge, the RF power supply providing a power selected to increase an ionization of atoms associated with the cathode target during sputtering.
12 . The apparatus, as defined by claim 11 , wherein the power supply coupled to the cathode magnet target assembly comprises a DC power supply, the DC power supply providing output power in a range of 1 to 100 kW.
13 . The apparatus, as defined by claim 12 , wherein the DC power supply comprises a pulsed power supply, the pulsed power supply providing a target power density during a pulse in a range of 0.1 to 100 kW/cm 2 .
14 . The apparatus, as defined by claim 11 , further comprising a substrate bias power supply coupled to a substrate holder, the substrate bias power supply providing a bias voltage on a substrate in a range of −10 to −200 V.
15 . The apparatus, as defined by claim 11 , wherein the feed gas comprises a noble gas, the noble gas comprising at least one of argon, xenon, neon, and krypton.
16 . The apparatus, as defined by claim 11 , wherein the feed gas comprises a mixture of a noble gas and a reactive gas.
17 . The apparatus, as defined by claim 11 , wherein the power supply coupled to the cathode magnet target assembly comprises a RF power supply, the RF power supply providing output power in a range of 1 to 20 kW.
18 . The apparatus, as defined by claim 11 , wherein the feed gas comprises a mixture of a noble gas and gas that comprises atoms of the cathode target.
19 . The apparatus, as defined by claim 11 , wherein the cathode magnet target assembly rotates with a speed in a range of 10 to 100 revolutions per minute.