Trimming method for microresonators and microresonators made thereby

1. A method for fabricating at least one resonant device, the method comprising:

identifying a desired common resonator frequency for at least one resonant element, each resonant element having a film of annealable material on at least one surface, each resonant element comprising piezoelectric material; and

adjusting a resonator frequency of the at least one resonant element using a feedback loop, the feedback loop comprising:

measuring a first resonator frequency of the at least one resonant element,

comparing the first resonator frequency to the desired common resonator frequency; and

based on the comparing, shifting to a second resonator frequency of the at least one resonant element by annealing the film of annealable material at a first temperature, wherein the shifting is toward the desired common resonator frequency.

2. The method of claim 1 , wherein the feedback loop is repeated until a measured resonator frequency is within a predetermined threshold of the desired common resonator frequency.

3. The method of claim 1 , wherein the second resonator frequency is measured while annealing the at least one resonant element.

4. The method of claim 1 , wherein the at least one resonant element is cooled prior to measuring the second resonator frequency.

5. The method of claim 1 , wherein the first temperature is increased for each iteration of the feedback loop.

6. The method of claim 1 , wherein the annealable material comprises a material whose elastic modulus is altered by annealing and which retains at least part of the change in elastic modulus when returned to room temperature.

7. The method of claim 1 , wherein the at least one resonant element includes a plurality of resonant elements arranged in a filter array.

8. The method of claim 7 , wherein each resonant element in the plurality of resonant elements is individually annealed using a laser.

9. The method of claim 1 , wherein the annealing is applied by a laser.

10. A system comprising:

a heat source configured to anneal at least one resonant element, where the at least one resonant element comprises an annealable film deposited on at least one surface, where the at least one resonant element comprises piezoelectric material;

a measurement device configured to measure a first resonant frequency of the at least one resonant element; and

a controller coupled to the heat source and the measurement device, wherein the controller is configured to control annealing of the at least one resonant element using a feedback loop, the feedback loop comprising:

receiving a measurement of the first resonator frequency of the at least one resonant element,

comparing the first resonator frequency to a desired common resonator frequency; and

based on the comparing, sending a control signal to the heat source to cause the at least one resonant element to shift to a second resonator frequency of the at least one resonant element to about the desired common resonator frequency by annealing the annealable film at a first temperature.

11. The system of claim 10 , wherein the controller is configured to repeat the feedback loop until the first resonator frequency is within a predetermined threshold of the desired common resonator frequency.

12. The system of claim 10 , further comprising a cooling element configured to cool the at least one resonant element.

13. The system of claim 10 , wherein the controller is configured to alter the first temperature for each iteration of the feedback loop.

14. A wafer comprising a plurality of resonant elements and an annealable film deposited on a facial surface of each resonant element,

wherein each of the plurality of resonant elements comprises a common resonator frequency,

wherein the common resonator frequency is configured by using a feedback loop to repeatedly anneal the annealable film at one or more annealing temperatures until each of the plurality of resonant elements resonates at about the common resonator frequency, and

wherein each of the plurality of resonant elements comprises piezoelectric material.

15. The wafer of claim 14 , wherein the annealable film comprises titanium nitride and/or an aluminum-copper alloy.

16. The wafer of claim 14 , wherein at least one of the plurality of resonant elements is configured to resonate at one or more frequencies associated with Lamb wave propagation in said element.

17. The wafer of claim 14 , wherein the one or more annealing temperatures comprises incrementing annealing temperatures.

18. The wafer of claim 14 , wherein the plurality of resonant elements comprise a filter.

19. The wafer of claim 14 , wherein at least one of the plurality of resonant elements is a width-extensional resonator.

20. The wafer of claim 14 , wherein at least one of the plurality of resonant elements is a length-extensional resonator.