OLED display panel and manufacturing method thereof
The disclosure relates to the field of OLED display technology, more particularly, to an OLED display panel and a manufacturing method thereof, during the manufacturing process of the OLED display panel, by forming a low gray color shift adjustment layer between the anode and the OLED device layer, and/or between the OLED device layer and the cathode, so as to solve the color shift problem under low gray-scale by adjusting thickness or doping concentration of the low gray color shift adjustment layer, and improve the accuracy of emitting color of the OLED panel.
1. An OLED display panel, comprising:
a substrate;
a thin-film transistor disposed on the substrate;
a planarizing layer, disposed on the thin-film transistor, comprising a through-hole penetrating the planarizing layer;
a first electrode, disposed on the planarizing layer, being electrically connected to the thin-film transistor via the through-hole;
an OLED device layer disposed on the first electrode;
a second electrode disposed on the OLED device layer;
a low gray color shift adjustment layer, disposed between the first electrode and the OLED device layer, and/or between the OLED device layer and the second electrode; and
an encapsulating cover disposed on the second electrode;
wherein the low gray color shift adjustment layer is doped with one or more dopants.
2. The OLED display panel according to claim 1 , wherein a thickness of the low gray color shift adjustment layer is 0.5˜500 nm.
3. The OLED display panel according to claim 1 , wherein the first electrode is an anode, and the second electrode is a cathode.
4. The OLED display panel according to claim 3 , wherein the anode is a reflective anode, and the cathode is a semitransparent-and-semireflective cathode.
5. The OLED display panel according to claim 1 , wherein the dopants of the low gray color shift adjustment layer are n-type dopants or p-type dopants.
6. The OLED display panel according to claim 5 , wherein the p-type dopants comprise HAT-CN, F4-TCNQ, TBAHA, SbC15 or FeC13.
7. The OLED display panel according to claim 5 , wherein the n-type dopants comprise alkali metal or alkali metal salt.
8. The OLED display panel according to claim 1 , wherein the OLED device layer comprises a hole injection layer, a hole transport layer, a emitting layer and an electron transport layer stacked in order from bottom to top.
9. The OLED display panel according to claim 8 , wherein the low gray color shift adjustment layer is positioned between the anode and the hole injection layer, and/or between the electron transport layer and the cathode.
10. An OLED display panel manufacturing method, comprising:
providing a substrate;
forming a thin-film transistor on the substrate;
forming a planarizing layer with a through-hole therein on the thin-film transistor, wherein the through-hole penetrates the planarizing layer;
forming a first electrode on the planarizing layer to be electrically connected to the thin-film transistor via the through-hole;
forming an OLED device layer on the first electrode;
forming a second electrode on the OLED device layer;
forming an encapsulating cover on the second electrode; and
forming a low gray color shift adjustment layer between the first electrode and the OLED device layer, and/or between the OLED device layer and the second electrode;
wherein the low gray color shift adjustment layer comprises one or plural dopants therein.
11. The manufacturing method according to claim 10 , wherein a thickness of the low gray color shift adjustment layer is 0.5˜500 nm.
12. The manufacturing method according to claim 10 , wherein the OLED device layer forming step comprises:
sequentially forming a hole injection layer, a hole transport layer, an emitting layer and an electron transport layer on the first electrode layer.
13. The manufacturing method according to claim 12 , wherein the low gray color shift adjustment layer is formed between the first electrode and the hole injection layer, and/or between the electron transport layer and the second electrode.
14. The manufacturing method according to claim 10 , wherein the first electrode is an anode, and the second electrode is a cathode.
15. The manufacturing method according to claim 14 , wherein the anode is formed as a reflective anode, and the cathode is formed as a semitransparent-and-semireflective cathode.
16. The manufacturing method according to claim 10 , wherein the dopants are p-type dopants or n-type dopants.
17. The manufacturing method according to claim 16 , wherein the n-type dopants comprise alkali metal or alkali metal salt.
18. The manufacturing method according to claim 16 , wherein the p-type dopants comprise HAT-CN, F4-TCNQ, TBAHA, SbC15 or FeC13.