IP Library Granted Patent US 9,698,193
Granted Patent B1
US 9,698,193 · App. 15/266,051 · Granted Jul 4, 2017

Multi-sensor pixel architecture for use in a digital imaging system

Inventors: Karim S. Karim (Waterloo, CA); Sina Ghanbarzadeh (Kitchener, CA)
Assignee: KA IMAGING INC.
H01L27/14663G01T1/2018G01T1/241G01T1/247H01L27/14636H01L27/14638H01L31/02161H01L31/022408
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Quick Facts
Patent No.
US 9,698,193
App. No.
15/266,051
Granted
Jul 4, 2017
Kind
B1
Abstract

A system and method for a multi-sensor pixel architecture for use in a digital imaging system is described. The system includes at least one semiconducting layer for absorbing radiation incident on opposites of the at least one semiconducting layer along with a set of electrodes on one side of the semiconducting layer for transmitting a signal associated with the radiation absorbed by the semiconducting layer.

Claims (19)

1. A detector element for a digital imaging system, the detector element comprising:

at least one top electrode metal-semiconductor-metal (MSM) detector; and

at least one bottom electrode MSM detector;

wherein said at least one top electrode MSM detector and said at least one bottom electrode MSM detector share a common semiconducting layer.

2. The detector element of claim 1 wherein said top electrode MSM detector comprises:

the semiconducting layer; and

a top electrode MSM detector set of electrodes patterned on a top electrode side of the semiconducting layer.

3. The detector element of claim 2 wherein the top electrode MSM detector further comprises:

a blocking layer deposited between the semiconducting layer and the top electrode MSM detector set of electrodes.

4. The detector element of claim 3 wherein the top electrode MSM detector set of electrodes are spaced laterally apart.

5. The detector element of claim 2 wherein the bottom electrode MSM detector comprises:

the semiconducting layer; and

a bottom electrode MSM detector set of electrodes patterned on a bottom side of the semiconducting layer; the bottom side of the semiconducting layer opposite the top side of the semiconducting layer.

6. The detector element of claim 5 wherein the bottom electrode MSM detector further comprises:

a blocking layer deposited between the bottom electrode MSM detector set of electrodes and the semiconducting layer.

7. The detector element of claim 5 wherein the top electrode MSM detector set of electrodes and the bottom electrode MSM detector set of electrodes share common electrodes.

8. The detector element of claim 1 further comprising a set of scintillators adjacent to at least one of the top or bottom electrode MSM detectors.

9. The detector element of claim 8 wherein the scintillators within the set of scintillators are placed on a top and a bottom side of at least one of the top or bottom electrode MSM detectors.

10. The detector element of claim 9 further comprising a fiber optic faceplate located between two scintillators within the set of scintillators.

Assignments (3)
TRANSFER OF AN EARLIER-RECORDED SECURITY INTEREST Recorded Oct 30, 2018
From: CHRISTIE MEDICAL HOLDINGS, INC.
To: USHIO AMERICA HOLDINGS, INC.
Reel/Frame 047906/0355 →
SECURITY INTEREST Recorded Oct 19, 2017
From: KA IMAGING INC.
To: CHRISTIE MEDICAL HOLDINGS, INC.
Reel/Frame 043903/0800 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 8, 2016
From: KARIM, KARIM S.; GHANBARZADEH, SINA
To: KA IMAGING INC.
Reel/Frame 040256/0682 →