Silicon-based materials containing gallium and methods of forming the same
A ceramic component is generally provided that includes a silicon-based layer comprising a silicon-containing material (e.g., a silicon metal and/or a silicide) and about 0.001% to about 85% of a Ga-containing compound. For example, the silicon-based layer can be a bond coating directly on the surface of the substrate. Alternatively or additionally, the silicon-based layer can be an outer layer defining a surface of the substrate, with an environmental barrier coating on the surface of the substrate. Gas turbine engines are also generally provided that include such a ceramic component.
1. A ceramic component comprising: a substrate defining a surface; and a silicon-based layer forming a bond coating directly on the surface of the substrate, wherein the silicon-based layer comprises a silicon-containing material and about 1% to 25% by weight of a Ga-containing compound, wherein the substrate is formed from a ceramic matrix composite (CMC) material, and wherein the silicon-containing material forms a continuous phase within the silicon-based layer.
2. The ceramic component as in claim 1 , wherein the silicon-containing material is silicon metal.
3. The ceramic component as in claim 2 , wherein a thermally grown oxide is on the bond coating, and wherein the thermally grown oxide layer remains amorphous up to an operating temperature of about 1415° C. or less.
4. The ceramic component as in claim 1 , wherein the silicon-containing material comprises a silicide.
5. The ceramic component as in claim 4 , wherein a thermally grown oxide is on the bond coating, and wherein the thermally grown oxide layer remains amorphous up to an operating temperature of about 1485° C. or less.
6. The ceramic component as in claim 4 , wherein the silicide comprises molybdenum silicide, rhenium silicide, or a mixture thereof.
7. The ceramic component as in claim 1 , wherein the silicon-based layer is an outer layer on the surface of the substrate; and the ceramic component further includes
an environmental barrier coating on the silicon-based layer.
8. The ceramic component as in claim 7 , wherein the substrate comprises the outer layer on a plurality of CMC plies, and wherein the outer layer comprises silicon carbide.
9. The ceramic component as in claim 1 , wherein the Ga-containing compound comprises Ga 2−x M x O 3 where M is In with x being 0 to about 2, Al with x being 0 to about 1.4, B with x being 0 to about 1.4, Fe with x being 0 to about 1.4, or a mixture thereof.
10. The ceramic component as in claim 1 , wherein the Ga-containing compound comprises ZrO 2 , HfO 2 , or a combination thereof doped with about 0.1% to about 10% by mole percent of Ga 2 O 3 .
11. The ceramic component as in claim 1 , wherein the Ga-containing compound comprises a compound having a formula:
Ln 4−x D x Ga 2−y In y O 9
where:
Ln is La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof;
D is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, where:
D is not equal to Ln;
if D is La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof, then x is 0 to less than 4;
if D is Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, then
x is 0 to about 2; and
y is 0 to about 1.
12. The ceramic component as in claim 1 , wherein the Ga-containing compound comprises a compound having a formula:
Ln 2−x−y Ga x In y Si 2 O 7
where
Ln is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof;
x is greater than 0 to about 1; and
y is 0 to about 1.
13. The ceramic component as in claim 1 , wherein the Ga-containing compound comprises a compound having a formula:
Ln 2−x−y Ga x In y Si 2 O 5
where
Ln is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof;
x is greater than 0 to about 1; and
y is 0 to about 1.
14. The ceramic component as in claim 1 , wherein the Ga-containing compound comprises a compound having a formula:
Ln 3 Ga 5−x M x O 12
where
Ln is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof; and
M is In with 0≤x<5, Al with 0≤x<5, Fe with 0≤x<5, B with 0≤x≤2.5, or a combination thereof.
15. The ceramic component as in claim 1 , wherein the Ga-containing compound comprises GaN.
16. The ceramic component as in claim 1 , wherein the Ga-containing compound is selected from the group consisting of:
GaN;
Ga 2 O 3 ;
Ga 2−x M x O 3 where M is In with x being 0 to about 2, Al with x being 0 to about 1.4, B with x being 0 to about 1.4, Fe with x being 0 to about 1.4, or a mixture thereof;
ZrO 2 , HfO 2 , or a combination thereof doped with up to about 10 mole % of Ga 2 O 3 ;
Ln 4−x D x Ga 2−y In y O 9 , where: Ln is La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof; D is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, where D is not equal to Ln, if D is La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof, then x is 0 to less than 4, if D is Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, then x is 0 to about 2; and y is 0 to about 1;
Ln 3 Ga 5−x M 12 , where Ln is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof; and M is In with 0 ≤x <5, Al with 0 ≤x <5, Fe with 0 ≤x <5, B with 0 ≤x ≤2.5, or a combination thereof; and
a mixture thereof.
17. A gas turbine engine comprising the ceramic component of claim 1 .
18. The ceramic component as in claim 1 , wherein the silicon-based layer comprises the Ga-containing compound and the silicon-containing material in continuous phases that are intertwined with each other.
19. The ceramic component as in claim 1 , wherein the silicon-based layer comprises a plurality of discrete phases of the Ga-containing compound dispersed within the continuous phase of the silicon-containing material.
20. The ceramic component as in claim 1 , wherein the silicon-based layer consists of the silicon-containing material and about 1% to 25% by weight of the Ga-containing compound.