Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
An oxide film is formed on a substrate by performing a cycle a predetermined number of times. The cycle includes: continuously performing supplying in advance an oxidant to a substrate in a process chamber and simultaneously supplying the oxidant and a precursor to the substrate in the process chamber, without having to purge an interior of the process chamber between the act of supplying in advance the oxidant and the act of simultaneously supplying the oxidant and the precursor; stopping the supply of the oxidant and the precursor to the substrate in the process chamber and purging the interior of the process chamber; and supplying the oxidant to the substrate in the purged process chamber.
1. A method of manufacturing a semiconductor device, comprising:
forming an oxide film containing a transition metal element selected from Ti, Zr, Hf, Ta, Nb, Mo or W on a substrate by performing a cycle a predetermined number of times, the cycle including:
continuously performing supplying in advance an oxidant to the substrate in a process chamber, and causing a gas phase reaction between the oxidant and a precursor containing the transition metal element and a halogen element and a surface reaction between an adsorption layer of the oxidant formed on the substrate and the precursor while simultaneously supplying the oxidant and the precursor to the substrate in the process chamber to form an oxide layer containing the transition metal element on the substrate, without having to purge an interior of the process chamber between the act of supplying in advance the oxidant and the act of simultaneously supplying the oxidant and the precursor;
stopping the supply of the oxidant and the precursor to the substrate in the process chamber and purging the interior of the process chamber; and
supplying the oxidant to the substrate in the purged process chamber,
wherein an adsorption layer of the oxidant is formed by performing the act of supplying in advance the oxidant to the substrate in the process chamber, and
wherein an implementation time period of the act of supplying in advance the oxidant is set longer than an implementation time period of the act of simultaneously supplying the oxidant and the precursor such that the adsorption layer of the oxidant formed on the substrate become a continuous layer.
2. The method of claim 1 , wherein in the act of continuously performing the act of supplying in advance the oxidant and the act of simultaneously supplying the oxidant and the precursor, the supply of the oxidant is not stopped and is maintained.
3. The method of claim 1 , wherein an implementation time period of the act of supplying the oxidant after the purging is set longer than an implementation time period of the act of simultaneously supplying the oxidant and the precursor.
4. The method of claim 1 , wherein when stopping the supply of the oxidant and the precursor, the supply of the oxidant and the supply of the precursor are simultaneously stopped.
5. The method of claim 1 , wherein when stopping the supply of the oxidant and the precursor, the supply of the oxidant is stopped earlier than the stop of the supply of the precursor.
6. The method of claim 1 , wherein the act of supplying the oxidant after the purging in an m th cycle (where m is an integer of one or more) and the act of supplying in advance the oxidant in an m+1 th cycle are implemented simultaneously.
7. The method of claim 1 , wherein during an implementation time period of the act of supplying the oxidant after the purging in an m th cycle (where m is an integer of one or more), the act of supplying in advance the oxidant in an m+1 th cycle is implemented.
8. The method of claim 1 , wherein during an implementation time period of the act of supplying in advance the oxidant in an m+1 th cycle (where m is an integer of one or more), the act of supplying the oxidant after the purging in an m th cycle is implemented.
9. The method of claim 1 , wherein the oxidant includes H 2 O or H 2 O 2 .
10. The method of claim 1 , wherein a temperature of the substrate ranges from room temperature to 200 degrees C. in the act of simultaneously supplying the oxidant and the precursor.
11. The method of claim 1 , wherein a temperature of the substrate ranges from room temperature to 100 degrees C. in the act of simultaneously supplying the oxidant and the precursor.
12. A non-transitory computer-readable recording medium storing a program that causes a computer to perform forming an oxide film containing a transition metal element selected from Ti, Zr, Hf, Ta, Nb, Mo or W on a substrate by performing a cycle a predetermined number of times, the cycle including:
continuously performing supplying in advance an oxidant to the substrate in a process chamber, and causing a gas phase reaction between the oxidant and a precursor containing the transition metal element and a halogen element and a surface reaction between an adsorption layer of the oxidant formed on the substrate and the precursor while simultaneously supplying the oxidant and the precursor to the substrate in the process chamber to form an oxide layer containing the transition metal element on the substrate, without having to purge an interior of the process chamber between the act of supplying in advance the oxidant and the act of simultaneously supplying the oxidant and the precursor;
stopping the supply of the oxidant and the precursor to the substrate in the process chamber and purging the interior of the process chamber; and
supplying the oxidant to the substrate in the purged process chamber,
wherein an adsorption layer of the oxidant is formed by performing the act of supplying in advance the oxidant to the substrate in the process chamber, and
wherein an implementation time period of the act of supplying in advance the oxidant is set longer than an implementation time period of the act of simultaneously supplying the oxidant and the precursor such that the adsorption layer of the oxidant formed on the substrate become a continuous layer.