Semiconductor die singulation method

1. A method of singulating semiconductor die from a semiconductor wafer comprising:

providing a semiconductor wafer having a plurality of semiconductor die formed as part of the semiconductor wafer and separated from each other by spaces, wherein the semiconductor wafer has first and second opposing major surfaces, and wherein a layer of material is disposed adjacent to the second major surface, and wherein the layer of material comprises a conductive material;

placing the semiconductor wafer onto a first carrier substrate, wherein the layer of material is adjacent the first carrier substrate;

singulating the semiconductor wafer through the spaces to form singulation lines, wherein singulating includes leaving at least a portion of the layer of material exposed adjacent the singulation lines; and

separating at least portions of the layer of material adjacent the singulation lines using a fluid.

2. The method of claim 1 , wherein separating comprises removing at least portions of the layer of material that extends across the singulation lines using the fluid.

3. The method of claim 1 wherein:

separating comprises separating using a fluid stream; and

the method further comprises moving the fluid stream with respect to the semiconductor wafer.

4. The method of claim 3 further comprising moving the semiconductor wafer during at least a portion of the step of separating at least portions of the layer of material.

5. The method of claim 1 , wherein separating at least portions of the layer of material comprises providing a fluid under pressure.

6. The method of claim 5 , wherein separating at least portions of the layer of material comprises using a substantially constant pressure as measured at a source for the fluid.

7. The method of claim 1 , wherein separating at least portions of the layer of material comprises:

separating first portions of the layer of material using a first fluid while the layer of material is attached to the first carrier substrate;

attaching a second carrier substrate to the first major surface of the semiconductor wafer;

removing the first carrier substrate; and

separating second portions of the layer of material using a second fluid.

8. The method of claim 1 , wherein separating at least portions of the layer of material comprises:

attaching a second carrier substrate to the first major surface of the semiconductor wafer;

removing the first carrier substrate; and

separating the portions of the layer of material from the singulation lines using the fluid.

9. The method of claim 1 , wherein:

placing the semiconductor wafer onto the first carrier substrate comprises placing the semiconductor wafer onto a carrier tape; and

singulating the semiconductor wafer comprises plasma etching the semiconductor wafer.

10. The method of claim 1 , further comprising expanding the first carrier substrate.

11. A method of singulating a substrate comprising:

providing a substrate having a plurality of die formed as part of the substrate and separated from each other by singulation lines, wherein the substrate comprises first and second opposing major surfaces, and wherein a layer of material is formed overlying the second major surface, and wherein at least a portion of the layer is exposed by the singulation lines, and wherein the substrate is attached to a carrier tape; and

physically separating portions of the layer of material from the singulation lines using a fluid.

12. The method of claim 11 , wherein physically separating portions of the layer of material comprises:

placing the substrate within a containment apparatus; and

providing the fluid adjacent to the carrier tape.

13. The method of claim 11 , wherein physically separating portions of the layer of material comprises:

dispensing the fluid through a nozzle proximate to the substrate; and

providing the fluid at one or more pressures in a range from about 10,342 Kilopascal to about 20,684 Kilopascal (about 1500 pounds/square inch (psi) to about 3000 psi) as measured at a source for the fluid.

14. The method of claim 13 , wherein physically separating portions of the layer of material comprises using a substantially constant pressure as measured at the source.

15. The method of claim 11 , wherein:

providing the substrate includes providing a semiconductor wafer having a conductive layer formed overlying the second major surface; and

physically separating comprises separating with a high pressure gas.

16. The method of claim 11 , wherein physically separating comprises using a heated fluid.

17. The method of claim 11 further comprising applying high frequency waves to the fluid.

18. The method of claim 17 further comprising heating the fluid.

19. The method of claim 11 , wherein providing the substrate comprises providing the layer of material comprising a conductive material.

20. The method of claim 11 , wherein providing the substrate comprises providing the layer of material comprising a wafer backside coating.

21. A method of singulating a substrate comprising:

providing a substrate having a plurality of die formed as part of the substrate and separated from each other by singulation lines, wherein the substrate has first and second opposing major surfaces, and wherein a conductive material is formed overlying the second major surface, and wherein a portion of the conductive material is exposed by the singulation lines;

providing the substrate attached to a first side of a carrier tape; and

singulating portions of the conductive material from the singulation lines using a fluid.

22. The method of claim 21 , wherein singulating comprises contacting the carrier tape with the fluid.

23. The method of claim 22 , wherein contacting the carrier tape with the fluid comprises contacting the first side.

24. The method of claim 22 , wherein contacting the carrier tape with the fluid comprises contacting a second side of the first carrier tape that is opposite to the first side.

25. The method of claim 21 further comprising laterally expanding the carrier tape during the singulating step.

26. The method of claim 21 , wherein singulating comprises singulating with a high pressure gas as measured at a source of the high pressure gas.

27. The method of claim 26 , wherein singulating with the high pressure gas comprises singulating with a gas comprising air.

28. The method of claim 27 further comprising placing the substrate within a containment apparatus before singulating portions of the conductive material.