Light-emitting element and light-emitting device including a first p-side semiconductor layer and a second p-side semiconductor layer

1. A light-emitting element comprising:

a light transmissive substrate;

a first semiconductor stacked body including:

a first n-side semiconductor layer located above part of the light transmissive substrate, and

a first p-side semiconductor layer located above the first n-side semiconductor layer, the first p-side semiconductor layer having a hole formed therein;

a first p-electrode located on the first p-side semiconductor layer;

a first n-electrode having a portion above the first p-electrode, and a portion extending into the hole, the first n-electrode being electrically connected to the first n-side semiconductor layer through the hole;

a second semiconductor stacked body including:

a second n-side semiconductor layer located above the light transmissive substrate around a periphery of the first semiconductor stacked body in a plan view, and

a second p-side semiconductor layer located above the second n-side semiconductor layer and located outside of an inner edge portion of the second n-side semiconductor layer;

a second p-electrode located on the second p-side semiconductor layer; and

a second n-electrode having a portion above the second p-electrode, and being electrically connected to the inner edge portion of the second n-side semiconductor layer.

2. The light-emitting element according to claim 1 ,

wherein a plurality of holes are formed in the first p-side semiconductor layer, and the plurality of holes are arranged along an outer edge portion of the first p-side semiconductor layer.

3. The light-emitting element according to claim 2 ,

wherein the first n-electrode extends along an arrangement direction of the plurality of holes and integrally connects the plurality of holes.

4. The light-emitting element according to claim 3 ,

wherein the first p-electrode includes:

a first light reflective layer located on approximately an entire upper surface of the first p-side semiconductor layer, and

a first conductive layer located on the first light reflective layer,

wherein the first conductive layer has a first connection portion and a second connection portion each of which is connected to the first light reflective layer,

wherein each of the first connection portion and the second connection portion has a shape corresponding to an outer edge shape of the first p-side semiconductor layer in the plan view,

wherein the first connection portion and the second connection portion are respectively located in an inner area and an outer area of a region encircled by an imaginary line connecting the plurality of holes along the outer edge portion of the first p-side semiconductor layer in the plan view, and

wherein a width of the second connection portion is larger than a width of the first connection portion.

5. A light-emitting device comprising:

the light-emitting element according to claim 3 ; and

an n-side external connection electrode located on a side of the light-emitting element, the side being opposite to the light transmissive substrate, the n-side external connection electrode being connected to the first n-electrode,

wherein the first n-electrode includes two arc portions each having an arc shape and extending from a connection portion where the first n-electrode is connected to the n-side external connection electrode in the plan view, and

wherein a width of each of the two arc portions in the connection portion where the first n-electrode is connected to the n-side external connection electrode is larger than a width of a tip end portion of each respective arc portion.

6. The light-emitting element according to claim 1 ,

wherein an outer edge of the first p-side semiconductor layer has a circular shape in the plan view.

7. The light-emitting element according to claim 1 ,

wherein the second n-electrode includes a plurality of inner edge connection portions electrically connected to the inner edge portion of the second n-side semiconductor layer, and

wherein the plurality of inner edge connection portions are arranged along an inner edge portion of the second p-side semiconductor layer.

8. The light-emitting element according to claim 7 ,

wherein the plurality of inner edge connection portions are arranged nearer to the second p-side semiconductor layer than to the first p-side semiconductor layer.

9. The light-emitting element according to claim 7 ,

wherein an outer edge of the second p-side semiconductor layer has a hexagonal shape in the plan view, and the second p-side semiconductor layer is arranged inwardly with respect to an outer edge portion of the second n-side semiconductor layer in the plan view,

wherein the second n-electrode includes a plurality of outer edge connection portions electrically connected to the outer edge portion of the second n-side semiconductor layer, and

wherein the plurality of outer edge connection portions are respectively arranged at corner portions corresponding to vertices of the hexagonal shape.

10. The light-emitting element according to claim 9 ,

wherein the plurality of inner edge connection portions of the second n-electrode and the plurality of outer edge connection portions of the second n-electrode are alternately arranged in a circumferential direction.

11. A light-emitting device comprising:

the light-emitting element according to claim 1 ; and

an external connection electrode located on a side of the light-emitting element, the side being opposite to the light transmissive substrate,

wherein the external connection electrode includes:

an n-side external connection electrode connected to the first n-electrode and the second n-electrode;

a first p-side external connection electrode connected to the first p-electrode; and

a second p-side external connection electrode connected to the second p-electrode.

12. The light-emitting device according to claim 11 ,

wherein the second p-electrode of the light-emitting element includes:

a second light reflective layer connected to approximately an entire upper surface of the second p-side semiconductor layer; and

a second conductive layer located on the second light reflective layer and connected to the second p-side external connection electrode.

13. The light-emitting device according to claim 11 , further comprising:

a wavelength conversion member on a side of the light transmissive substrate of the light-emitting element,

wherein the wavelength conversion member includes:

a first phosphor layer covering the first p-side semiconductor layer in the plan view, and

a second phosphor layer located around a periphery of the first phosphor layer and covering the second p-side semiconductor layer in the plan view.

14. The light-emitting device according to claim 13 , further comprising a Fresnel lens located on a surface side of the wavelength conversion member, the surface side being opposite to the light transmissive substrate.

15. A light-emitting element comprising:

a light transmissive substrate;

one n-side semiconductor layer located above the light transmissive substrate;

a first p-side semiconductor layer located above part of the n-side semiconductor layer, the first p-side semiconductor layer having a hole formed therein;

a first p-electrode located on the first p-side semiconductor layer;

a first n-electrode having a portion above the first p-electrode, and a portion extending into the hole, the first n-electrode being electrically connected to the n-side semiconductor layer through the hole;

a second p-side semiconductor layer located above the n-side semiconductor layer around a periphery of the first p-side semiconductor layer in a plan view;

a second p-electrode located on the second p-side semiconductor layer; and

a second n-electrode having a portion above the second p-electrode, and being electrically connected to the n-side semiconductor layer in an area between the first p-side semiconductor layer and the second p-side semiconductor layer.

16. The light-emitting element according to claim 15 ,

wherein the second n-electrode includes a plurality of inner edge connection portions electrically connected to the n-side semiconductor layer, and

wherein the plurality of inner edge connection portions are arranged along an inner edge portion of the second p-side semiconductor layer.

17. The light-emitting element according to claim 16 ,

wherein the plurality of inner edge connection portions are arranged nearer to the second p-side semiconductor layer than to the first p-side semiconductor layer.

18. The light-emitting element according to claim 16 ,

wherein an outer edge of the second p-side semiconductor layer has a hexagonal shape in the plan view, and the second p-side semiconductor layer is arranged inwardly with respect to an outer edge portion of the n-side semiconductor layer in the plan view,

wherein the second n-electrode includes a plurality of outer edge connection portions electrically connected to the outer edge portion of the n-side semiconductor layer, and

wherein the plurality of outer edge connection portions are respectively arranged at corner portions corresponding to vertices of the hexagonal shape.

19. The light-emitting element according to claim 18 ,

wherein the plurality of inner edge connection portions of the second n-electrode and the plurality of outer edge connection portions of the second n-electrode are alternately arranged in a circumferential direction.